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参数资料
| 型号： | 74LVC1G00GM,115 |
| 厂商： | NXP Semiconductors |
| 文件页数： | 16/19页 |
| 文件大小： | 0K |
| 描述： | IC SNGL 2-IN NAND GATE 6-XSON |
| 产品培训模块： | Logic Packages |
| 标准包装： | 5,000 |
| 系列： | 74LVC |
| 逻辑类型： | 与非门 |
| 电路数： | 1 |
| 输入数： | 2 |
| 电源电压： | 1.65 V ~ 5.5 V |
| 电流 - 静态（最大值）： | 200µA |
| 输出电流高，低： | 32mA，32mA |
| 逻辑电平 - 低： | 0.7 V ~ 0.8 V |
| 逻辑电平 - 高： | 1.7 V ~ 2 V |
| 额定电压和最大 CL 时的最大传播延迟： | 1.8ns @ 5V，50pF |
| 工作温度： | -40°C ~ 125°C |
| 安装类型： | 表面贴装 |
| 供应商设备封装： | 6-XSON，SOT886（1.45x1） |
| 封装/外壳： | 6-XFDFN |
| 包装： | 带卷 (TR) |
74LVC1G00
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 10 — 2 July 2012
6 of 19
NXP Semiconductors
74LVC1G00
Single 2-input NAND gate
[1]
All typical values are measured at VCC = 3.3 V and Tamb =25 C.
11. Dynamic characteristics
[1]
Typical values are measured at Tamb =25 C and VCC = 1.8 V, 2.5 V, 2.7 V, 3.3 V and 5.0 V respectively.
[2]
tpd is the same as tPLH and tPHL.
[3]
CPD is used to determine the dynamic power dissipation (PD in W).
PD =CPD VCC2 fi N+ (CL VCC2 fo) where:
fi = input frequency in MHz;
fo = output frequency in MHz;
CL = output load capacitance in pF;
VCC = supply voltage in V;
N = number of inputs switching;
(C
L VCC
2
f
o) = sum of outputs.
IOFF
power-off
leakage
current
VCC = 0 V; VI or VO =5.5 V
-
0.1
10
-
200
A
ICC
supply current
VI = 5.5 V or GND; IO = 0 A;
VCC = 1.65 V to 5.5 V
-0.1
10
-
200
A
I
CC
additional
supply current
VCC = 2.3 V to 5.5 V;
VI =VCC 0.6 V; IO =0 A;
per pin
-
5
500
-
5000
A
CI
input
capacitance
VCC =3.3 V; VI = GND to VCC
-5
-
pF
Table 7.
Static characteristics …continued
At recommended operating conditions. Voltages are referenced to GND (ground = 0 V).
Symbol Parameter
Conditions
40 C to +85 C
40 C to +125 C
Unit
Min
Typ[1]
Max
Min
Max
Table 8.
Dynamic characteristics
Voltages are referenced to GND (ground = 0 V); for load circuit see Figure 9.
Symbol Parameter
Conditions
40 C to +85 C
40 C to +125 C Unit
Min
Typ[1]
Max
Min
Max
tpd
propagation delay
A, B to Y; see Figure 8
VCC = 1.65 V to 1.95 V
1.0
3.3
8.0
1.0
10.5
ns
VCC = 2.3 V to 2.7 V
0.5
2.2
5.5
0.5
7.0
ns
VCC = 2.7 V
0.5
2.6
5.8
0.5
7.5
ns
VCC = 3.0 V to 3.6 V
0.5
2.2
4.7
0.5
6.0
ns
VCC = 4.5 V to 5.5 V
0.5
1.8
4.0
0.5
5.5
ns
CPD
power dissipation
capacitance
VI = GND to VCC;
VCC = 3.3 V
-14-
-
pF
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