| 型号： | 75HQ045 |
| 厂商： | Vishay Semiconductors |
| 文件页数： | 2/3页 |
| 文件大小： | 0K |
| 描述： | DIODE SCHOTTKY 45V 75A DO-5 |
| 标准包装： | 100 |
| 二极管类型： | 肖特基 |
| 电压 - (Vr)（最大）： | 45V |
| 电流 - 平均整流 (Io)： | 75A |
| 电压 - 在 If 时为正向 (Vf)（最大）： | 710mV @ 75A |
| 速度： | 快速恢复 =< 500 ns，> 200mA（Io） |
| 电流 - 在 Vr 时反向漏电： | 5mA @ 45V |
| 安装类型： | 底座，接线柱安装 |
| 封装/外壳： | DO-203AB，DO-5，接线柱 |
| 供应商设备封装： | DO-203AB |
| 包装： | 散装 |
| 其它名称： | VS-75HQ045 VS-75HQ045-ND VS75HQ045 VS75HQ045-ND |
| 75HQ... Series Bulletin FD-2.246 reV.C 11/02 lnlerncilionolIEZR Rectifier Voltage Ratings VR Max. DC Reverse Voltage (V) VRWM Max. Working Peak Reverse Voltage (V) Absolute Maximum RatingsElectrical Specifications Parameters |F(AV ) Max. Average Forward Current50%dutycycle@TC=117°C,rectangularwaveform ‘See Fig.5 IFSM Max. Peakone Cycle Non-Repetitive Surgecurrent ‘See Fig. 7 5ps Sine oraus Rect. pulse Following anyra1ed1 oms sine orems Rect. pulse with rated VRRM apphed load cond on and EAS Non-RepetitiveAvalancneEnergy TJ=25°C, iAS=15Amps, L=0.9mH IAR RepetitiveAvalancnecurrent Currentdeoayinglinearlyto zero in 1 psecFrequencylimited byTJ max.VA =1.5xVR typical Parameters V Max. Forward Voltage Drop (1) * See Fig. 1IRM Max. Reverse Leakage Current (1) FM * See Fig. 2 VR = rated VR CT Max. Junction Capacitance VR = 5VDC. (test signal range 100Khz to 1Mnz) 25 “C LS Typical Series Inductance Measured from top of terminal to mounting plane dv/dt Max. Voltage Rate of Change(Rated VR)( ) 1 Pulse Width < aooiis. Duty Cycle < 2% Thermal-Mechanical Specifications ParametersTJ Max.JunctionTemperatureRange Tstg Max. StorageTemperature Range Max. Thermal Resistance Junction to CaseRimc Dcoperation ‘ See Fig. 4 Typical Thermal Resistance, CasetoHeatsinkRihcs Mounting surface , smooth and greased wt Approximate Weight TMountingTorque Min. bricated th reads Max. Casestyle WWW.il'f.C0m |
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