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参数资料
| 型号： | 76132P |
| 厂商： | Intersil Corporation |
| 英文描述： | Dual, Precision JFET High Speed Operational Amplifier; Package: SOIC; No of Pins: 8; Temperature Range: Industrial |
| 中文描述： | 第75A，30V的，0.011 Ohm的N通道，逻辑电平UltraFET功率MOSFET |
| 文件页数： | 5/10页 |
| 文件大小： | 110K |
| 代理商： | 76132P |
6-134
FIGURE 7. TRANSFER CHARACTERISTICS
FIGURE 8. SATURATION CHARACTERISTICS
FIGURE 9. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
FIGURE 10. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
FIGURE 11. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
FIGURE 12. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
Typical Performance Curves
Unless Otherwise Specified
(Continued)
0
2
3
4
5
1
V
GS
, GATE TO SOURCE VOLTAGE (V)
0
20
60
100
I
D
150
o
C
-40
o
C
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
V
DD
= 15V
120
80
25
o
C
40
V
GS
= 4.5V
V
GS
= 4V
0
1
2
3
4
0
20
40
80
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
V
GS
= 5V
V
GS
= 10V
V
GS
= 3V
120
I
D
,
V
GS
= 3.5V
100
60
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
T
C
= 25
C
10
12
14
18
6
4
V
GS
, GATE TO SOURCE VOLTAGE (V)
2
6
10
8
I
D
= 75A
I
D
= 25A
r
D
,
O
)
8
16
I
D
= 51A
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
0.6
0.8
1.0
1.4
-60
0
60
120
180
N
T
J
, JUNCTION TEMPERATURE (
o
C)
O
1.2
1.6
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
V
GS
= 10V, I
D
= 75A
-60
0
60
120
180
0.6
0.8
1.2
N
T
J
, JUNCTION TEMPERATURE (
o
C)
T
V
GS
= V
DS
, I
D
= 250
μ
A
1.0
1.2
1.1
1.0
0.9
-60
0
60
120
180
T
J
, JUNCTION TEMPERATURE (
o
C)
N
B
I
D
= 250
μ
A
HUF76132P3, HUF76132S3S
相关PDF资料 |
PDF描述 |
|---|---|
| 76132P | 75A, 30V, 0.011 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs |
| F10-SERIES | TPS65124 Evaluation Module |
| F12-SERIES | Peripheral IC |
| F13-SERIES | Peripheral IC |
| F11-SERIES | Peripheral IC |
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