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参数资料
| 型号： | 76132P |
| 厂商： | Intersil Corporation |
| 英文描述： | Dual, Precision JFET High Speed Operational Amplifier; Package: SOIC; No of Pins: 8; Temperature Range: Industrial |
| 中文描述： | 第75A，30V的，0.011 Ohm的N通道，逻辑电平UltraFET功率MOSFET |
| 文件页数： | 8/10页 |
| 文件大小： | 110K |
| 代理商： | 76132P |
6-137
PSPICE Electrical Model
SUBCKT HUF76132 2 1 3 ;
REV May 1998
CA 12 8 2.35e-9
CB 15 14 2.35e-9
CIN 6 8 1.45e-9
DBODY 7 5 DBODYMOD
DBREAK 5 11 DBREAKMOD
DPLCAP 10 5 DPLCAPMOD
EBREAK 11 7 17 18 33.34
EDS 14 8 5 8 1
EGS 13 8 6 8 1
ESG 6 10 6 8 1
EVTHRES 6 21 19 8 1
EVTEMP 20 6 18 22 1
IT 8 17 1
LDRAIN 2 5 1e-9
LGATE 1 9 5.42e-9
LSOURCE 3 7 4.16e-9
MMED 16 6 8 8 MMEDMOD
MSTRO 16 6 8 8 MSTROMOD
MWEAK 16 21 8 8 MWEAKMOD
RBREAK 17 18 RBREAKMOD 1
RDRAIN 50 16 RDRAINMOD 3.5e-4
RGATE 9 20 2.61
RLDRAIN 2 5 10
RLGATE 1 9 54.2
RLSOURCE 3 7 41.6
RSLC1 5 51 RSLCMOD 1e-6
RSLC2 5 50 1e3
RSOURCE 8 7 RSOURCEMOD 6.5-3
RVTHRES 22 8 RVTHRESMOD 1
RVTEMP 18 19 RVTEMPMOD 1
S1A 6 12 13 8 S1AMOD
S1B 13 12 13 8 S1BMOD
S2A 6 15 14 13 S2AMOD
S2B 13 15 14 13 S2BMOD
VBAT 22 19 DC 1
ESLC 51 50 VALUE={(V(5,51)/ABS(V(5,51)))*(PWR(V(5,51)/(1e-6*450),3))}
.MODEL DBODYMOD D (IS = 1.79e-12 IKF = 20 RS = 5.32e-3 TRS1 = 7e-4 TRS2 = 1.21e-6 CJO = 2.65e-9 TT = 3.24e-8 M = 4.2e-1 XTI=6)
.MODEL DBREAKMOD D (RS = 8.25e-2 TRS1 = 9.12e-4 TRS2 = 8.14e-7)
.MODEL DPLCAPMOD D (CJO = 1.3e-9 IS = 1e-30 N = 10 M = 6.1e-1)
.MODEL MMEDMOD NMOS (VTO = 1.86 KP = 4 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u RG = 2.61)
.MODEL MSTROMOD NMOS (VTO = 2.2 KP = 120 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u)
.MODEL MWEAKMOD NMOS (VTO = 1.63 KP =1e-1 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u RG = 26.1 RS=1e-1)
.MODEL RBREAKMOD RES (TC1 = 9.97e-4 TC2 = 1.24e-7)
.MODEL RDRAINMOD RES (TC1 = 7.2e-2 TC2 = 1e-4)
.MODEL RSLCMOD RES (TC1 = 1.07e-3 TC2 = 1.25e-6)
.MODEL RSOURCEMOD RES (TC1 = 1e-11 TC2 = 1e-11)
.MODEL RVTHRESMOD RES (TC1 = -2e-3 TC2 = -9.2e-6)
.MODEL RVTEMPMOD RES (TC1 = -1.08e-3 TC2 = 9.73e-7)
.MODEL S1AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -6.00 VOFF= -1.00)
.MODEL S1BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -1.00 VOFF= -6.00)
.MODEL S2AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = 0.00 VOFF= 1.65)
.MODEL S2BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = 1.65 VOFF= 0.00)
.ENDS
NOTE: For further discussion of the PSPICE model, consult
A New PSPICE Sub-Circuit for the Power MOSFET Featuring Global
Temperature Options
; IEEE Power Electronics Specialist Conference Records, 1991, written by William J. Hepp and C. Frank Wheatley.
18
22
+
-
6
8
+
-
5
51
+
-
19
8
+
-
17
18
-
6
8
+
-
5
8
+
-
RBREAK
RVTEMP
VBAT
RVTHRES
IT
17
18
19
22
12
13
15
S1A
S1B
S2A
S2B
CA
CB
EGS
EDS
14
8
13
8
14
13
MWEAK
EBREAK
DBODY
RSOURCE
SOURCE
3
11
7
LSOURCE
RLSOURCE
CIN
RDRAIN
EVTHRES
16
21
8
MMED
MSTRO
DRAIN
2
LDRAIN
RLDRAIN
DBREAK
DPLCAP
ESLC
RSLC1
51
10
5
50
RSLC2
1
GATE
RGATE
EVTEMP
9
ESG
LGATE
RLGATE
20
+
-
+
6
HUF76132P3, HUF76132S3S
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| 76132P | 75A, 30V, 0.011 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs |
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| F12-SERIES | Peripheral IC |
| F13-SERIES | Peripheral IC |
| F11-SERIES | Peripheral IC |
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