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参数资料
| 型号： | 7721-2A |
| 厂商： | Electronic Theatre Controls, Inc. |
| 英文描述： | H Bridge Power Module |
| 中文描述： | H桥功率模块 |
| 文件页数： | 2/5页 |
| 文件大小： | 98K |
| 代理商： | 7721-2A |
7-32
Model 7721 Series
Parameter
Symbol
Conditions
1
Min.
Typ.
Max.
Units
Q1-Q4 IGBT
Continuous Collector Current
I
C
T
C
= 25°C
T
C
= 100°C
40
22
80
15
250
3.0
A
A
A
Pulsed Collector Current
Reverse Avalanche Energy
Collector Leakage Current
Saturation Voltage
I
CM
E
AVR
I
CES
V
CE(ON)
mJ
μA
V
V
V
nA
nC
nC
nC
ns
ns
mJ
pF
pF
pF
°C
°C/W
V
GE
= 0V, V
CE
= 500V
I
C
= 22A, V
GE
= 15V
I
C
= 40A, V
GE
= 15V
V
CE
= V
GE
, I
C
= 250μA
V
GE
= ±20V
I
C
= 22A, V
CC
= 400V,V
GE
= 15V
I
C
= 22A, V
CC
= 400V,V
GE
= 15V
I
C
= 22A, V
CC
= 400V,V
GE
= 15V
I
C
= 22A, V
CC
= 400V,V
GE
= 15V,R
G
= 10
w/tail
I
C
= 22A, V
CC
= 400V,V
GE
= 15V,R
G
= 10
w/tail
I
C
= 22A, V
CC
= 400V,V
GE
= 15V,R
G
= 10
w/tail
V
GE
= 0V, V
CC
= 30V, f = 1MHz
V
GE
= 0V, V
CC
= 30V, f = 1MHz
V
GE
= 0V, V
CC
= 30V, f = 1MHz
2.4
2.8
Gate Threshold Voltage
Gate Leakage Current
Total Gate Charge (turn on)
Gate Emitter Charge (turn on)
Gate Collector Charge (turn on)
Turn Off Delay Time
Fall Time
Total Switching Loss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Junction Temperature
Thermal Resistance
D1-D4 Fred Diodes
Reverse Leakage Current
V
GE(TH)
I
GES
Q
g
Q
ge
Q
gc
td
(off)
tf
Ets
Cies
Coes
Cres
T
J
R
thjc
3.0
5.5
±100
83
17
29
150
100
.70
55
11
19
100
56
.55
1400
250
42
150
.94
I
R
V
R
= 600V
V
R
= .8x600V, T
J
= 125°C
I
F
= 8A
I
F
= 8A, T
J
= 150°C
I
F
= 1A, -di/dt = 50A/μs, V
R
= 30V
20
1.5
1.5
1.3
50
150
3.1
μA
mA
V
V
ns
°C
°C/W
Forward Voltage
V
F
Reverse Recovery Time
Junction Temperature
Thermal Resistance
TH1 NTC Thermistor
Resistance
Resistance Ratio
trr
T
j
R
thjc
35
R
25
R
T
/R
25
I = 1mA
t = 80°C
t = 90°C
t = 100°C
t = 110°C
22.5
25
.126
.0916
.0679
.0511
1.0
27.5
K
Dissipation Constant
Thermal Time Constant
P
D
t
mW/°C
sec
10
ELECTRICAL CHARACTERISTICS (7721-1A)
1 - TCase = 25°C unless otherwise specified.
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