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参数资料
| 型号： | 7782 |
| 厂商： | 意法半导体 |
| 英文描述： | 32 Mbit (2Mb x 16, Dual Bank, Burst ) 1.8V Supply Flash Memory |
| 中文描述： | 32兆位（含2Mb × 16，双行，突发）1.8V电源快闪记忆体 |
| 文件页数： | 1/63页 |
| 文件大小： | 435K |
| 代理商： | 7782 |
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PRELIMINARY DATA
September 2002
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.
M58CR032C
M58CR032D
32 Mbit (2Mb x 16, Dual Bank, Burst )
1.8V Supply Flash Memory
FEATURES SUMMARY
I
SUPPLY VOLTAGE
– V
DD
= 1.65V to 2V for Program, Erase and
Read
– V
DDQ
= 1.65V to 3.3V for I/O Buffers
– V
PP
= 12V for fast Program (optional)
I
SYNCHRONOUS / ASYNCHRONOUS READ
– Burst mode Read: 54MHz
– Page mode Read (4 Words Page)
– Random Access: 85, 100, 120 ns
I
PROGRAMMING TIME
– 10μs by Word typical
– Double/Quadruple Word programming option
I
MEMORY BLOCKS
– Dual Bank Memory Array: 8/24 Mbit
– Parameter Blocks (Top or Bottom location)
I
DUAL OPERATIONS
– Read in one Bank while Program or Erase in
other
– No delay between Read and Write operations
I
BLOCK LOCKING
– All blocks locked at Power up
– Any combination of blocks can be locked
– WP for Block Lock-Down
I
SECURITY
– 64 bit user programmable OTP cells
– 64 bit unique device identifier
– One parameter block permanently lockable
I
COMMON FLASH INTERFACE (CFI)
I
100,000 PROGRAM/ERASE CYCLES per
BLOCK
Figure 1. Packages
I
ELECTRONIC SIGNATURE
– Manufacturer Code: 20h
– Top Device Code, M58CR032C: 88C8h
– Bottom Device Code, M58CR032D: 88C9h
FBGA
TFBGA56 (ZB)
6.5 x 10 mm
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