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| 型号： | 7782 |
| 厂商： | 意法半导体 |
| 英文描述： | 32 Mbit (2Mb x 16, Dual Bank, Burst ) 1.8V Supply Flash Memory |
| 中文描述： | 32兆位（含2Mb × 16，双行，突发）1.8V电源快闪记忆体 |
| 文件页数： | 49/63页 |
| 文件大小： | 435K |
| 代理商： | 7782 |
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M58CR032C, M58CR032D
Table 31. CFI Query System Interface Information
Table 32. Device Geometry Definition
Offset
Data
Description
Value
1Bh
0017h
V
DD
Logic Supply Minimum Program/Erase or Write voltage
bit 7 to 4
BCD value in volts
bit 3 to 0
BCD value in 100 millivolts
1.7V
1Ch
0020h
V
DD
Logic Supply Maximum Program/Erase or Write voltage
bit 7 to 4
BCD value in volts
bit 3 to 0
BCD value in 100 millivolts
2V
1Dh
0017h
V
PP
[Programming] Supply Minimum Program/Erase voltage
bit 7 to 4
HEX value in volts
bit 3 to 0
BCD value in 100 millivolts
1.7V
1Eh
00C0h
V
PP
[Programming] Supply Maximum Program/Erase voltage
bit 7 to 4
HEX value in volts
bit 3 to 0
BCD value in 100 millivolts
12V
1Fh
0004h
Typical time-out per single Byte/Word program = 2
n
μs
16μs
20h
0003h
Typical time-out for Quadruple Word Program = 2
n
μs
8μs
21h
000Ah
Typical time-out per individual Block Erase = 2
n
ms
1s
22h
0000h
Typical time-out for full Chip Erase = 2
n
ms
NA
23h
0003h
Maximum time-out for Word Program = 2
n
times typical
128μs
24h
0004h
Maximum time-out for Quadruple Word = 2
n
times typical
128μs
25h
0002h
Maximum time-out per individual Block Erase = 2
n
times typical
4s
26h
0000h
Maximum time-out for Chip Erase = 2
n
times typical
NA
Offset Word
Mode
Data
Description
Value
27h
0016h
Device Size = 2
n
in number of Bytes
4 MByte
28h
29h
0001h
0000h
Flash Device Interface Code description
x16
Async.
2Ah
2Bh
0003h
0000h
Maximum number of Bytes in multi-Byte program or page = 2
n
8 Byte
2Ch
0002h
Number of Erase Block Regions within the device
bit 7 to 0 = x = number of Erase Block Regions
It specifies the number of regions within the device containing one or more
contiguous Erase Blocks of the same size.
2
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