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参数资料
| 型号： | 7782 |
| 厂商： | 意法半导体 |
| 英文描述： | 32 Mbit (2Mb x 16, Dual Bank, Burst ) 1.8V Supply Flash Memory |
| 中文描述： | 32兆位（含2Mb × 16，双行，突发）1.8V电源快闪记忆体 |
| 文件页数： | 23/63页 |
| 文件大小： | 435K |
| 代理商： | 7782 |
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23/63
M58CR032C, M58CR032D
The value for the Burst Configuration Register is
always presented on A0-A15. M0 is on A0, M1 on
A1, etc.; the other address bits are ignored.
Table 6. Commands
Note: 1. X = Don’t Care, RA=Read Address, RD=Read Data, SRD=Status Register Data, ESA= Electronic Signature Address, ID=Identifier
(Manufacture and Device Code), QA=Query Address, QD=Query Data, BA=Block Address, PA=Program Address, PD=Program
Data, PRA=Protection Register Address, PRD=Protection Register Data, BCRA=Burst Configuration Register Address,
BCRD=Burst Configuration Register Data.
2. The signature addresses are listed in Tables 8, 9 and 10.
3. Program Addresses 1 and 2 must be consecutive Addresses differing only for A0.
4. Program Addresses 1,2,3 and 4 must be consecutive Addresses differing only for A0 and A1.
Commands
C
Bus Write Operations
1st Cycle
2nd Cycle
3rd Cycle
4th Cycle
5th Cycle
Op.
Add Data Op.
Add
Data Op. Add Data Op.
Add Data Op. Add Data
Read Memory
Array
1+ Write
BKA
FFh
Read
RA
RD
Read Status
Register
1+ Write
BKA
70h
Read
BKA
SRD
Read Electronic
Signature
1+ Write
ESA
90h Read ESA
(2)
IDh
Read CFI Query
1+ Write
QA
98h Read
QA
QD
Block Erase
2
Write
BA
20h
Write
BA
D0h
Bank Erase
2
Write
BKA
80h
Write
BKA
D0h
Program
2
Write
PA
40h
or
10h
Write
PA
PD
Double Word
Program
(3)
3
Write
PA1
30h
Write
PA1
PD1 Write PA2
PD2
Quadruple Word
Program
(4)
5
Write
PA1
55h
Write
PA1
PD1
Write PA2
PD2 Write PA3
PD3 Write PA4
PD4
Clear Status
Register
1
Write
BKA
50h
Program/Erase
Suspend
1
Write
BKA
B0h
Program/Erase
Resume
1
Write
BKA
D0h
Block Lock
2
Write
BA
60h
Write
BA
01h
Block Unlock
2
Write
BA
60h
Write
BA
D0h
Block Lock-Down
2
Write
BA
60h
Write
BA
2Fh
Protection
Register Program
2
Write
PRA
C0h
Write
PRA
PRD
Set Burst
Configuration
Register
2
Write BCRA
60h
Write
BCRA
03h
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