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| 型号： | 8N3Q001EG-203LCDI8 |
| 厂商： | IDT, Integrated Device Technology Inc |
| 文件页数： | 6/21页 |
| 文件大小： | 0K |
| 描述： | IC CLCK OSC QUAD FREQUENCY 5X7 |
| 特色产品： | Fourth-generation FemtoClock for VCXO |
| 标准包装： | 1 |
| 系列： | FemtoClock® NG |
| 类型： | 时钟振荡器 |
| 频率： | 可调节/可选择 |
| 电源电压： | 2.375 V ~ 3.465 V |
| 电流 - 电源： | 150mA |
| 工作温度： | -40°C ~ 85°C |
| 封装/外壳： | 10-CLCC |
| 包装： | 标准包装 |
| 供应商设备封装： | 10-CLCC |
| 安装类型： | 表面贴装 |
| 其它名称： | 800-2570-6 |
IDT8N3Q001 REV G Data Sheet
QUAD-FREQUENCY PROGRAMMABLE-XO
IDT8N3Q001GCD REVISION A MARCH 6, 2012
14
2012 Integrated Device Technology, Inc.
Power Considerations
This section provides information on power dissipation and junction temperature for the IDT8N3Q001.
Equations and example calculations are also provided.
1.
Power Dissipation.
The total power dissipation for the IDT8N3Q001 is the sum of the core power plus the power dissipated in the load(s).
The following is the power dissipation for VCC = 3.465V, which gives worst case results.
NOTE: Please refer to Section 3 for details on calculating power dissipated in the load.
Power (core)MAX = VCC_MAX * IEE_MAX = 3.465V * 140mA = 485.1mW
Power (outputs)MAX = 34.2mW/Loaded Output pair
Total Power_MAX (3.465V, with all outputs switching) = 485.1mW + 34.2mW = 519.3mW
2. Junction Temperature.
Junction temperature, Tj, is the temperature at the junction of the bond wire and bond pad directly affects the reliability of the device. The
maximum recommended junction temperature is 125°C. Limiting the internal transistor junction temperature, Tj, to 125°C ensures that the bond
wire and bond pad temperature remains below 125°C.
The equation for Tj is as follows: Tj =
JA * Pd_total + TA
Tj = Junction Temperature
JA = Junction-to-Ambient Thermal Resistance
Pd_total = Total Device Power Dissipation (example calculation is in section 1 above)
TA = Ambient Temperature
In order to calculate junction temperature, the appropriate junction-to-ambient thermal resistance
JA must be used. Assuming no air flow and
a multi-layer board, the appropriate value is 49.4°C/W per Table 7 below.
Therefore, Tj for an ambient temperature of 85°C with all outputs switching is:
85°C + 0.519W * 49.4°C/W = 110.7°C. This is below the limit of 125°C.
This calculation is only an example. Tj will obviously vary depending on the number of loaded outputs, supply voltage, air flow and the type of
board (multi-layer).
Table 7. Thermal Resistance JA for 10 Lead Ceramic 5mm x 7mm Package, Forced Convection
JA by Velocity
Meters per Second
01
2.5
Multi-Layer PCB, JEDEC Standard Test Boards
49.4°C/W
44.2°C/W
41°C/W
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| 8N3Q001EG-204LCDI | 功能描述:时钟发生器及支持产品 RoHS:否 制造商:Silicon Labs 类型:Clock Generators 最大输入频率:14.318 MHz 最大输出频率:166 MHz 输出端数量:16 占空比 - 最大:55 % 工作电源电压:3.3 V 工作电源电流:1 mA 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:QFN-56 |
| 8N3Q001EG-204LCDI8 | 功能描述:IC CLCK OSC QUAD FREQUENCY 5X7 RoHS:是 类别:集成电路 (IC) >> 时钟/计时 - 可编程计时器和振荡器 系列:FemtoClock® NG 标准包装:3,000 系列:- 类型:振荡器 - 晶体 计数:- 频率:- 电源电压:2.3 V ~ 5.5 V 电流 - 电源:1.07mA 工作温度:-30°C ~ 80°C 封装/外壳:SOT-665 包装:带卷 (TR) 供应商设备封装:SS迷你型-5D 安装类型:表面贴装 其它名称:AN8955SSMTXLTR |
| 8N3Q001EG-2148CDI | 制造商:Integrated Device Technology Inc 功能描述:10-LEAD CERAMIC 5X7 - Bulk |
| 8N3Q001EG-2148CDI8 | 功能描述:Clock Oscillator IC 231.25MHz 10-CLCC 制造商:idt, integrated device technology inc 系列:FemtoClock? NG 包装:带卷（TR） 零件状态:有效 类型:时钟振荡器 计数:- 频率:231.25MHz 电压 - 电源:3.135 V ~ 3.465 V 电流 - 电源:140mA 工作温度:-40°C ~ 85°C 封装/外壳:10-CLCC 供应商器件封装:10-CLCC（7x5） 安装类型:表面贴装 标准包装:1,000 |
| 8N3Q001EG-2163CDI | 制造商:Integrated Device Technology Inc 功能描述:SMD Crystal Oscillator 3.3V 10-Pin CLCC Tray 制造商:Integrated Device Technology Inc 功能描述:10-LEAD CERAMIC 5X7 - Bulk |
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