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参数资料
| 型号： | 92MT120KPBF |
| 厂商： | VISHAY INTERTECHNOLOGY INC |
| 元件分类： | 晶闸管 |
| 英文描述： | 1200 V, SCR |
| 封装： | ROHS COMPLIANT, INT-A-PAK-9 |
| 文件页数： | 2/9页 |
| 文件大小： | 182K |
| 代理商： | 92MT120KPBF |
www.vishay.com
For technical questions, contact: indmodules@vishay.com
Document Number: 94353
2
Revision: 13-Aug-08
5.MT...KPbF, 9.MT...KPbF, 11.MT...KPbF Series
Vishay High Power Products Three Phase Controlled Bridge
(Power Modules), 55 A to 110 A
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE NUMBER
VOLTAGE
CODE
VRRM, MAXIMUM
REPETITIVE PEAK
REVERSE VOLTAGE
V
VRSM, MAXIMUM
NON-REPETITIVE PEAK
REVERSE VOLTAGE
V
VDRM, MAXIMUM REPETITIVE
PEAK OFF-STATE VOLTAGE,
GATE OPEN CIRCUIT
V
IRRM/IDRM,
MAXIMUM
AT TJ = 125 °C
mA
5.MT...K
80
800
900
800
10
100
1000
1100
1000
120
1200
1300
1200
140
1400
1500
1400
160
1600
1700
1600
9.MT...K
11.MT...K
80
800
900
800
20
100
1000
1100
1000
120
1200
1300
1200
140
1400
1500
1400
160
1600
1700
1600
FORWARD CONDUCTION
PARAMETER
SYMBOL
TEST CONDITIONS
5.MT...K
9.MT...K
11.MT...K
UNITS
Maximum DC output
current at case temperature
IO
120° rect. conduction angle
55
90
110
A
85
°C
Maximum peak, one-cycle
forward, non-repetitive
on state surge current
ITSM
t = 10 ms
No voltage
reapplied
Initial TJ = TJ maximum
390
950
1130
A
t = 8.3 ms
410
1000
1180
t = 10 ms
100 % VRRM
reapplied
330
800
950
t = 8.3 ms
345
840
1000
Maximum I2t for fusing
I2t
t = 10 ms
No voltage
reapplied
770
4525
6380
A2s
t = 8.3 ms
700
4130
5830
t = 10 ms
100 % VRRM
reapplied
540
3200
4510
t = 8.3 ms
500
2920
4120
Maximum I2
√t for fusing
I2
√t
t = 0.1 ms to 10 ms, no voltage reapplied
7700
45 250
63 800
A2
√s
Low level value of
threshold voltage
VT(TO)1
(16.7 % x
π x IT(AV) < I < π x IT(AV)), TJ maximum
1.17
1.09
1.04
V
High level value of
threshold voltage
VT(TO)2
(I >
π x IT(AV)), TJ maximum
1.45
1.27
Low level value on-state
slope resistance
rt1
(16.7 % x
π x IT(AV) < I < π x IT(AV)), TJ maximum
12.40
4.10
3.93
m
Ω
High level value on-state
slope resistance
rt2
(I >
π x IT(AV)), TJ maximum
11.04
3.59
3.37
Maximum on-state
voltage drop
VTM
Ipk = 150 A, TJ = 25 °C, tp = 400 μs single junction
2.68
1.65
1.57
V
Maximum non-repetitve
rate of rise of turned on
current
dI/dt
TJ = 25 °C, from 0.67 VDRM, ITM =
π x IT(AV),
Ig = 500 mA, tr < 0.5 μs, tp > 6 μs
150
A/μs
Maximum holding current
IH
TJ = 25 °C, anode supply = 6 V,
resistive load, gate open circuit
200
mA
Maximum latching current
IL
TJ = 25 °C, anode supply = 6 V, resistive load
400
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