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参数资料
| 型号： | 92MT120KPBF |
| 厂商： | VISHAY INTERTECHNOLOGY INC |
| 元件分类： | 晶闸管 |
| 英文描述： | 1200 V, SCR |
| 封装： | ROHS COMPLIANT, INT-A-PAK-9 |
| 文件页数： | 3/9页 |
| 文件大小： | 182K |
| 代理商： | 92MT120KPBF |
Document Number: 94353
For technical questions, contact: indmodules@vishay.com
www.vishay.com
Revision: 13-Aug-08
3
5.MT...KPbF, 9.MT...KPbF, 11.MT...KPbF Series
Three Phase Controlled Bridge
(Power Modules), 55 A to 110 A
Vishay High Power Products
Note
(1) Available with dV/dt = 1000 V/μs, to complete code add S90 i. e. 113MT160KBS90
BLOCKING
PARAMETER
SYMBOL
TEST CONDITIONS
5.MT...K
9.MT...K
11.MT...K
UNITS
RMS isolation voltage
VISOL
TJ = 25 °C all terminal shorted, f = 50 Hz, t = 1 s
4000
V
Maximum critical rate of rise of
off-state voltage
dV/dt (1)
TJ = TJ maximum, linear to 0.67 VDRM,
gate open circuit
500
V/μs
TRIGGERING
PARAMETER
SYMBOL
TEST CONDITIONS
5.MT...K
9.MT...K
11.MT...K
UNITS
Maximum peak gate power
PGM
TJ = TJ maximum
10
W
Maximum average gate power
PG(AV)
2.5
Maximum peak gate current
IGM
2.5
A
Maximum peak negative
gate voltage
- VGT
10
V
Maximum required DC gate
voltage to trigger
VGT
TJ = - 40 °C
Anode supply = 6 V,
resistive load
4.0
TJ = 25 °C
2.5
TJ = 125 °C
1.7
Maximum required DC gate
current to trigger
IGT
TJ = - 40 °C
270
mA
TJ = 25 °C
150
TJ = 125 °C
80
Maximum gate voltage
that will not trigger
VGD
TJ = TJ maximum, rated VDRM applied
0.25
V
Maximum gate current
that will not trigger
IGD
6mA
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
5.MT...K
9.MT...K
11.MT...K
UNITS
Maximum junction operating
and storage temperature range
TJ, TStg
- 40 to 125
°C
Maximum thermal resistance,
junction to case
RthJC
DC operation per module
0.18
0.14
0.12
K/W
DC operation per junction
1.07
0.86
0.70
120 °C rect. conduction angle per module
0.19
0.15
0.12
120 °C rect. conduction angle per junction
1.17
0.91
0.74
Maximum thermal resistance,
case to heatsink per module
RthCS
Mounting surface smooth, flat and grased
0.03
Mounting
torque ± 10 %
to heatsink
A mounting compound is recommended and
the torque should be rechecked after a period of
3 hours to allow for the spread of the
compound. Lubricated threads.
4 to 6
Nm
to terminal
3 to 4
Approximate weight
225
g
相关PDF资料 |
PDF描述 |
|---|---|
| 92MT120KS90PBF | 1200 V, SCR |
| 92MT140KPBF | 1400 V, SCR |
| 92MT140KS90PBF | 1400 V, SCR |
| 92MT160KPBF | 1600 V, SCR |
| 92MT160KS90PBF | 1600 V, SCR |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 92MT120KS90PBF | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Three Phase Controlled Bridge (Power Modules), 55 A to 110 A |
| 92MT140K | 制造商:未知厂家 制造商全称:未知厂家 功能描述:THYRISTOR MODULE|3-PH FULL-WAVE|HALF-CNTLD|CC|1.4KV V(RRM)|90A I(T) |
| 92MT140KB | 功能描述:RECT BRIDGE 1400V 90A INT-A-PAK RoHS:否 类别:半导体模块 >> 桥式整流器 系列:- 标准包装:10 系列:- 电压 - 峰值反向(最大):1000V 电流 - DC 正向(If):35A 二极管类型:单相 速度:标准恢复 >500ns，> 200mA（Io） 反向恢复时间(trr):- 安装类型:底座安装 封装/外壳:ISOTOP 包装:托盘 供应商设备封装:ISOTOP? |
| 92MT140KBS90 | 制造商:IRF 制造商全称:International Rectifier 功能描述:THREE PHASE CONTROLLED BRIDGE |
| 92MT140KPBF | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Three Phase Controlled Bridge (Power Modules), 55 A to 110 A |
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