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参数资料
| 型号： | 933789430127 |
| 厂商： | NXP SEMICONDUCTORS |
| 元件分类： | 晶闸管 |
| 英文描述： | 9 A, 500 V, SCR |
| 文件页数： | 3/8页 |
| 文件大小： | 71K |
| 代理商： | 933789430127 |
Philips Semiconductors
Product specification
Thyristors
BT151F series
Fig.1. Maximum on-state dissipation, P
tot, versus
average on-state current, I
T(AV), where
a = form factor = I
T(RMS)/ IT(AV).
Fig.2. Maximum permissible non-repetitive peak
on-state current I
TSM, versus pulse width tp, for
sinusoidal currents, t
p ≤ 10ms.
Fig.3. Maximum permissible rms current I
T(RMS) ,
versus heatsink temperature T
hs.
Fig.4. Maximum permissible non-repetitive peak
on-state current I
TSM, versus number of cycles, for
sinusoidal currents, f = 50 Hz.
Fig.5. Maximum permissible repetitive rms on-state
current I
T(RMS), versus surge duration, for sinusoidal
currents, f = 50 Hz; T
hs ≤ 87C.
Fig.6. Normalised gate trigger voltage
V
GT(Tj)/ VGT(25C), versus junction temperature Tj.
0
12345
6
0
2
4
6
8
10
a = 1.57
1.9
2.2
2.8
4
IF(AV) / A
Ptot / W
conduction
angle
form
factor
degrees
30
60
90
120
180
4
2.8
2.2
1.9
1.57
125
116
107
98
89
80
Ths(max) / C
a
1
10
100
1000
0
20
40
60
80
100
120
Number of half cycles at 50Hz
ITSM / A
T
ITSM
time
I
Tj initial = 25 C max
T
10
100
1000
10us
100us
1ms
10ms
T / s
ITSM / A
T
ITSM
time
I
Tj initial = 25 C max
T
dI /dt limit
T
0.01
0.1
1
10
0
5
10
15
20
25
surge duration / s
IT(RMS) / A
-50
0
50
100
150
0
2
4
6
8
10
Ths / C
IT(RMS) / A
87 C
-50
0
50
100
150
0.4
0.6
0.8
1
1.2
1.4
1.6
Tj / C
VGT(Tj)
VGT(25 C)
June 1999
3
Rev 1.200
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