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参数资料
| 型号： | 933912920215 |
| 厂商： | NXP SEMICONDUCTORS |
| 元件分类： | 小信号晶体管 |
| 英文描述： | VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET |
| 封装： | SMD, SST3, 3 PIN |
| 文件页数： | 5/12页 |
| 文件大小： | 100K |
| 代理商： | 933912920215 |
1996 Jul 29
2
Philips Semiconductors
Product specication
N-channel silicon junction
eld-effect transistors
BF545A; BF545B; BF545C
FEATURES
Low leakage level (typ. 500 fA)
High gain
Low cut-off voltage (max. 2.2 V for BF545A).
APPLICATIONS
Impedance converters in e.g. electret microphones and
infra-red detectors
VHF amplifiers in oscillators and mixers.
DESCRIPTION
N-channel symmetrical silicon junction field-effect
transistors in a SOT23 package.
PINNING - SOT23
PIN
SYMBOL
DESCRIPTION
1
s
source
2
d
drain
3
g
gate
Fig.1 Simplified outline and symbol.
Marking codes:
BF545A: M65.
BF545B: M66.
BF545C: M67.
handbook, halfpage
s
d
g
21
3
MAM036
Top view
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VDS
drain-source voltage
±30
V
VGSoff
gate-source cut-off voltage
ID =1 A; VDS =15V
0.4
7.8
V
IDSS
drain current
VGS = 0; VDS =15V
BF545A
2
6.5
mA
BF545B
6
15
mA
BF545C
12
25
mA
Ptot
total power dissipation
up to Tamb =25 °C
250
mW
y
fs
forward transfer admittance
VGS = 0; VDS = 15 V
3
6.5
mS
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