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参数资料
| 型号： | 933912920215 |
| 厂商： | NXP SEMICONDUCTORS |
| 元件分类： | 小信号晶体管 |
| 英文描述： | VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET |
| 封装： | SMD, SST3, 3 PIN |
| 文件页数： | 8/12页 |
| 文件大小： | 100K |
| 代理商： | 933912920215 |
1996 Jul 29
5
Philips Semiconductors
Product specication
N-channel silicon junction
eld-effect transistors
BF545A; BF545B; BF545C
DYNAMIC CHARACTERISTICS
Tamb =25 °C; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
TYP.
UNIT
Cis
input capacitance
VDS =15V; VGS = 10 V; f = 1 MHz
1.7
pF
VDS =15V; VGS = 0; f = 1 MHz
3
pF
Crs
reverse transfer capacitance
VDS =15V; VGS = 10 V; f = 1 MHz
0.8
pF
VDS =15V; VGS = 0; f = 1 MHz
0.9
pF
gis
common source input conductance VDS =10V; ID = 1 mA; f = 100 MHz
15
S
VDS =10V; ID = 1 mA; f = 450 MHz
300
S
gfs
common source transfer
conductance
VDS =10V; ID = 1 mA; f = 100 MHz
2
mS
VDS =10V; ID = 1 mA; f = 450 MHz
1.8
mS
grs
common source reverse
conductance
VDS =10V; ID = 1 mA; f = 100 MHz
6
S
VDS =10V; ID = 1 mA; f = 450 MHz
40
S
gos
common source output
conductance
VDS =10V; ID = 1 mA; f = 100 MHz
30
S
VDS =10V; ID = 1 mA; f = 450 MHz
60
S
Fig.3
Drain current as a function of gate-source
cut-off voltage; typical values.
VDS = 15 V; Tj =25 °C.
handbook, halfpage
0
30
20
10
0
2
4
8
6
MBB467
IDSS
(mA)
VGSoff (V)
Fig.4
Forward transfer admittance as a
function of gate-source cut-off voltage;
typical values.
VDS = 15 V; VGS = 0; Tj =25 °C.
handbook, halfpage
0
6
5
4
2
4
8
MBB466
6
VGSoff (V)
Yfs
(mS)
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