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参数资料
| 型号： | 934022730215 |
| 厂商： | NXP SEMICONDUCTORS |
| 元件分类： | 小信号晶体管 |
| 英文描述： | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封装： | PLASTIC PACKAGE-4 |
| 文件页数： | 6/12页 |
| 文件大小： | 79K |
| 代理商： | 934022730215 |
1995 Apr 07
3
Philips Semiconductors
Product specication
NPN 2 GHz RF power transistor
BFG11; BFG11/X
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
20
V
VCEO
collector-emitter voltage
open base
8V
VEBO
emitter-base voltage
open collector
2.5
V
IC
collector current (DC)
500
mA
IC(AV)
average collector current
500
mA
Ptot
total power dissipation
up to Ts =60 °C; note 1; see Fig.2
400
mW
Tstg
storage temperature
65
+150
°C
Tj
junction temperature
175
°C
Fig.2 Power derating curve.
handbook, halfpage
0
50
100
200
0
MLC818
150
T ( C)
o
s
Ptot
(mW)
300
500
400
100
THERMAL CHARACTERISTICS
Note to the “Limiting values” and “Thermal characteristics”
1. Ts is the temperature at the soldering point of the collector pin.
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-s
thermal resistance from junction to soldering point
up to Ts =60 °C; note 1;
Ptot = 400 mW
290
K/W
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