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参数资料
| 型号： | 934022730215 |
| 厂商： | NXP SEMICONDUCTORS |
| 元件分类： | 小信号晶体管 |
| 英文描述： | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封装： | PLASTIC PACKAGE-4 |
| 文件页数： | 7/12页 |
| 文件大小： | 79K |
| 代理商： | 934022730215 |
1995 Apr 07
4
Philips Semiconductors
Product specication
NPN 2 GHz RF power transistor
BFG11; BFG11/X
CHARACTERISTICS
Tj =25 °C unless otherwise specied.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V(BR)CBO
collector-base breakdown voltage
open emitter; IC = 0.1 mA; IE =0
20
V
V(BR)CEO
collector-emitter breakdown voltage
open base; IC = 10 mA; IB =0
8
V
V(BR)EBO
emitter-base breakdown voltage
open collector; IE = 0.1 mA; IC = 0
2.5
V
ICES
collector cut-off current
VCE =8V; VBE =0
100
A
hFE
DC current gain
IC = 100 mA; VCE =5V
25
Cc
collector capacitance
IE =ie = 0; VCB = 3.6 V; f = 1 MHz
4pF
Cre
feedback capacitance
IC = 0; VCE = 3.6 V; f = 1 MHz
3pF
IC = 0; f = 1 MHz.
Fig.3
Collector capacitance as a function of
collector-base voltage; typical values.
handbook, halfpage
MLC848
010
48
4
0
3
6
2
1
C c
(pF)
VCB (V)
2
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