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参数资料
| 型号： | 934056715115 |
| 厂商： | NXP SEMICONDUCTORS |
| 元件分类： | 二极管(射频、小信号、开关、功率) |
| 英文描述： | 1 A, SILICON, SIGNAL DIODE |
| 封装： | ULTRA SMALL, PLASTIC, SMD, 6 PIN |
| 文件页数： | 2/8页 |
| 文件大小： | 44K |
| 代理商： | 934056715115 |
2002 Jun 24
2
Philips Semiconductors
Preliminary specication
Schottky barrier diode
BAT960
FEATURES
High current capability
Very low forward voltage
Ultra small plastic SMD package
Flat leads: excellent coplanarity and improved thermal
behaviour.
APPLICATIONS
Ultra high-speed switching
rectification
DC/DC conversion
Switch mode power supply
Inverse polarity protection.
GENERAL DESCRIPTION
Planar Schottky barrier diode with an integrated guard ring
for stress protection in a SOT666 ultra small SMD plastic
package.
PINNING
PIN
DESCRIPTION
1
cathode
2
cathode
3
anode
4
anode
5
cathode
6
cathode
handbook, halfpage
12
3
4
5
6
1, 2
5, 6
3, 4
MHC310
Fig.1 Simplified outline (SOT666) and symbol.
Marking code: B9.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Note
1. Only valid, if pins 3 and 4 are connected in parallel.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VR
continuous reverse voltage
20
V
IF
continuous forward current
1A
IFSM
non-repetitive peak forward current
t = 8.3 ms half sinewave;
JEDEC method; note 1
8A
Tstg
storage temperature
65
+150
°C
Tj
junction temperature
125
°C
Tamb
operating ambient temperature
65
+125
°C
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