参数资料
型号: 93C66C-I/SN
厂商: Microchip Technology
文件页数: 7/38页
文件大小: 0K
描述: IC EEPROM 4KBIT 3MHZ 8SOIC
标准包装: 100
格式 - 存储器: EEPROMs - 串行
存储器类型: EEPROM
存储容量: 4K(512 x 8 或 256 x 16)
速度: 3MHz
接口: Microwire 3 线串行
电源电压: 4.5 V ~ 5.5 V
工作温度: -40°C ~ 85°C
封装/外壳: 8-SOIC(0.154",3.90mm 宽)
供应商设备封装: 8-SOICN
包装: 管件
产品目录页面: 1452 (CN2011-ZH PDF)
93AA66A/B/C, 93LC66A/B/C, 93C66A/B/C
2.4 Erase
The ERASE instruction forces all data bits of the speci-
fied address to the logical ‘ 1 ’ state. CS is brought low
following the loading of the last address bit. This falling
edge of the CS pin initiates the self-timed program-
ming cycle, except on ‘93C’ devices where the rising
edge of CLK before the last address bit initiates the
write cycle.
The DO pin indicates the Ready/ Busy status of the
device if CS is brought high after a minimum of 250 ns
low (T CSL ). DO at logical ‘ 0 ’ indicates that programming
is still in progress. DO at logical ‘ 1 ’ indicates that the
register at the specified address has been erased and
the device is ready for another instruction.
Note: Issuing a Start bit and then taking CS low
will clear the Ready/ Busy status from DO.
FIGURE 2-1:
CS
CLK
ERASE TIMING FOR 93AA AND 93LC DEVICES
T CSL
Check Status
DI
1
1
1
A N
A N -1 A N -2
???
A0
T SV
T CZ
DO
High-Z
Busy
Ready
High-Z
T WC
FIGURE 2-2:
ERASE TIMING FOR 93C DEVICES
T CSL
CS
CLK
Check Status
DI
1
1
1
A N
A N -1 A N -2
???
A0
T SV
T CZ
DO
High-Z
Busy
Ready
High-Z
T WC
? 2003-2011 Microchip Technology Inc.
DS21795E-page 7
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