参数资料
型号: 93C66CT-E/MNY
厂商: Microchip Technology
文件页数: 3/38页
文件大小: 0K
描述: IC EEPROM SER 4K 512X8/256 8TDFN
标准包装: 3,300
格式 - 存储器: EEPROMs - 串行
存储器类型: EEPROM
存储容量: 4K(512 x 8 或 256 x 16)
速度: 3MHz
接口: Microwire 3 线串行
电源电压: 4.5 V ~ 5.5 V
工作温度: -40°C ~ 125°C
封装/外壳: 8-WFDFN 裸露焊盘
供应商设备封装: 8-TDFN(2x3)
包装: 带卷 (TR)
93AA66A/B/C, 93LC66A/B/C, 93C66A/B/C
1.0
ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings (?)
V CC .............................................................................................................................................................................7.0V
All inputs and outputs w.r.t. V SS ..........................................................................................................-0.6V to V CC +1.0V
Storage temperature ...............................................................................................................................-65°C to +150°C
Ambient temperature with power applied................................................................................................-40°C to +125°C
ESD protection on all pins ??????????????????????????????????????????????????????????????????????????????????????????????????????????????????????????????????????????????????????? 4 kV
? NOTICE: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the
device. This is a stress rating only and functional operation of the device at those or any other conditions above those
indicated in the operational listings of this specification is not implied. Exposure to maximum rating conditions for
extended periods may affect device reliability.
TABLE 1-1:
DC CHARACTERISTICS
All parameters apply over the specified
ranges unless otherwise noted.
Industrial (I): T A = -40°C to +85°C, V CC = +1.8V to +5.5V
Automotive (E): T A = -40°C to +125°C, V CC = +2.5V to +5.5V
Param.
No.
D1
D2
D3
D4
D5
D6
D7
Symbol
V IH 1
V IH 2
V IL 1
V IL 2
V OL 1
V OL 2
V OH 1
V OH 2
I LI
I LO
C IN ,
Parameter
High-level input voltage
Low-level input voltage
Low-level output voltage
High-level output voltage
Input leakage current
Output leakage current
Pin capacitance (all inputs/
Min
2.0
0.7 V CC
-0.3
-0.3
2.4
V CC - 0.2
Typ
Max
V CC +1
V CC +1
0.8
0.2 V CC
0.4
0.2
±1
±1
7
Units
V
V
V
V
V
V
V
V
? A
? A
pF
Conditions
V CC ?? 2.7V
V CC < 2.7V
V CC ?? 2.7V
V CC < 2.7V
I OL = 2.1 mA, V CC = 4.5V
I OL = 100 ? A, V CC = 2.5V
I OH = -400 ? A, V CC = 4.5V
I OH = -100 ? A, V CC = 2.5V
V IN = V SS or V CC
V OUT = V SS or V CC
V IN /V OUT = 0V (Note 1)
C OUT
outputs)
T A = 25°C, F CLK = 1 MHz
D8
D9
I CC write Write current
I CC read Read current
500
100
2
1
500
mA
? A
mA
? A
? A
F CLK = 3 MHz, Vcc = 5.5V
F CLK = 2 MHz, Vcc = 2.5V
F CLK = 3 MHz, V CC = 5.5V
F CLK = 2 MHz, V CC = 3.0V
F CLK = 2 MHz, V CC = 2.5V
D10
I CCS
Standby current
1
5
? A
? A
I – Temp
E – Temp
CLK = Cs = 0V
ORG = DI = V SS or V CC
(Note 2) (Note 3)
D11
V POR
V CC voltage detect
93AA66A/B/C, 93LC66A/B/C
93C66A/B/C
1.5V
3.8V
V
V
(Note 1)
Note 1:
2:
3:
This parameter is periodically sampled and not 100% tested.
ORG pin not available on ‘A’ or ‘B’ versions.
Ready/ Busy status must be cleared from DO; see Section 3.4 "Data Out (DO)" .
? 2003-2011 Microchip Technology Inc.
DS21795E-page 3
相关PDF资料
PDF描述
93C66BT-E/MNY IC EEPROM SER 4K 256X16 8TDFN
93C66AT-E/MNY IC EEPROM SER 4K 512X8 8TDFN
24LCS52T-I/MNY IC EEPROM SER 2K 256X8 8TDFN
24AA52T-I/MNY IC EEPROM SER 2K 2.5V 8TDFN
24FC64T-I/OT IC EEPROM 64KBIT 1MHZ SOT-23-5
相关代理商/技术参数
参数描述
93C66CTEMS 制造商:MICROCHIP 制造商全称:Microchip Technology 功能描述:4K Microwire Compatible Serial EEPROM
93C66CTEMSG 制造商:MICROCHIP 制造商全称:Microchip Technology 功能描述:4K Microwire Compatible Serial EEPROM
93C66CTEOT 制造商:MICROCHIP 制造商全称:Microchip Technology 功能描述:4K Microwire Compatible Serial EEPROM
93C66CTEOTG 制造商:MICROCHIP 制造商全称:Microchip Technology 功能描述:4K Microwire Compatible Serial EEPROM
93C66CTEP 制造商:MICROCHIP 制造商全称:Microchip Technology 功能描述:4K Microwire Compatible Serial EEPROM