参数资料
型号: 93C66CT-E/MNY
厂商: Microchip Technology
文件页数: 8/38页
文件大小: 0K
描述: IC EEPROM SER 4K 512X8/256 8TDFN
标准包装: 3,300
格式 - 存储器: EEPROMs - 串行
存储器类型: EEPROM
存储容量: 4K(512 x 8 或 256 x 16)
速度: 3MHz
接口: Microwire 3 线串行
电源电压: 4.5 V ~ 5.5 V
工作温度: -40°C ~ 125°C
封装/外壳: 8-WFDFN 裸露焊盘
供应商设备封装: 8-TDFN(2x3)
包装: 带卷 (TR)
93AA66A/B/C, 93LC66A/B/C, 93C66A/B/C
2.5 Erase All (ERAL)
The Erase All ( ERAL ) instruction will erase the entire
memory array to the logical ‘ 1 ’ state. The ERAL cycle
is identical to the erase cycle, except for the different
opcode. The ERAL cycle is completely self-timed and
commences at the falling edge of the CS, except on
‘93C’ devices where the rising edge of CLK before the
last data bit initiates the write cycle. Clocking of the
CLK pin is not necessary after the device has entered
the ERAL cycle.
The DO pin indicates the Ready/ Busy status of the
device, if CS is brought high after a minimum of 250 ns
low (T CSL ).
Note: Issuing a Start bit and then taking CS low
will clear the Ready/ Busy status from DO.
V CC must be ? 4.5V for proper operation of ERAL.
FIGURE 2-3:
CS
CLK
ERAL TIMING FOR 93AA AND 93LC DEVICES
T CSL
Check Status
DI
1
0
0
1
0
x
???
x
T SV
T CZ
DO
High-Z
Busy
Ready
High-Z
T EC
V CC must be ? 4.5V for proper operation of ERAL.
FIGURE 2-4:
ERAL TIMING FOR 93C DEVICES
T CSL
CS
CLK
Check Status
DI
1
0
0
1
0
x
???
x
T SV
T CZ
DO
High-Z
Busy
Ready
High-Z
T EC
DS21795E-page 8
? 2003-2011 Microchip Technology Inc.
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