参数资料
型号: 93C86BT-I/OT
厂商: Microchip Technology
文件页数: 9/38页
文件大小: 0K
描述: IC EEPROM 16KBIT 3MHZ SOT23-6
标准包装: 1
格式 - 存储器: EEPROMs - 串行
存储器类型: EEPROM
存储容量: 16K (1K x 16)
速度: 3MHz
接口: Microwire 3 线串行
电源电压: 4.5 V ~ 5.5 V
工作温度: -40°C ~ 85°C
封装/外壳: SOT-23-6
供应商设备封装: SOT-23-6
包装: 标准包装
产品目录页面: 1452 (CN2011-ZH PDF)
其它名称: 93C86BT-I/OTDKR
93AA86A/B/C, 93LC86A/B/C, 93C86A/B/C
2.8
Write
The DO pin indicates the Ready/ Busy status of the
The WRITE instruction is followed by 8 bits (If ORG is
low or A-version devices) or 16 bits (If ORG pin is high
or B-version devices) of data which are written into the
specified address. The self-timed auto-erase and
programming cycle is initiated by the rising edge of CLK
on the last data bit.
device, if CS is brought high after a minimum of 250 ns
low (T CSL ). DO at logical ‘ 0 ’ indicates that programming
is still in progress. DO at logical ‘ 1 ’ indicates that the
register at the specified address has been written with
the data specified and the device is ready for another
instruction.
Note:
Note:
The write sequence requires a logic high
signal on the PE pin prior to the rising
edge of the last data bit.
After the Write cycle is complete, issuing a
Start bit and then taking CS low will clear
the Ready/ Busy status from DO
FIGURE 2-6:
WRITE TIMING
T CSL
CS
CLK
DI
1
0
1
A N
???
A0
Dx
???
D0
T SV
T CZ
DO
High-Z
Busy
Ready
High-Z
T WC
? 2003-2012 Microchip Technology Inc.
DS21797L-page 9
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