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参数资料
| 型号： | 93C86CT-E/MNY |
| 厂商： | Microchip Technology |
| 文件页数： | 3/38页 |
| 文件大小： | 0K |
| 描述： | IC EEPROM SER 16K 1024X16 8TDFN |
| 标准包装： | 3,300 |
| 格式 - 存储器： | EEPROMs - 串行 |
| 存储器类型： | EEPROM |
| 存储容量： | 16K（2K x 8 或 1K x 16） |
| 速度： | 3MHz |
| 接口： | Microwire 3 线串行 |
| 电源电压： | 4.5 V ~ 5.5 V |
| 工作温度： | -40°C ~ 125°C |
| 封装/外壳： | 8-WFDFN 裸露焊盘 |
| 供应商设备封装： | 8-TDFN（2x3） |
| 包装： | 带卷 (TR) |
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93AA86A/B/C, 93LC86A/B/C, 93C86A/B/C
1.0
ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings (?)
V CC .............................................................................................................................................................................7.0V
All inputs and outputs w.r.t. V SS ..........................................................................................................-0.6V to V CC +1.0V
Storage temperature ...............................................................................................................................-65°C to +150°C
Ambient temperature with power applied................................................................................................-40°C to +125°C
ESD protection on all pins ??????????????????????????????????????????????????????????????????????????????????????????????????????????????????????????????????????????????????????? 4 kV
Note:
? NOTICE: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent dam-
age to the device. This is a stress rating only and functional operation of the device at those or any other
conditions above those indicated in the operational listings of this specification is not implied. Exposure to
maximum rating conditions for extended periods may affect device reliability.
TABLE 1-1:
DC CHARACTERISTICS
All parameters apply over the specified
ranges unless otherwise noted.
Industrial (I): T A = -40°C to +85°C, V CC = +1.8V to 5.5V
Automotive (E): T A = -40°C to +125°C, V CC = +2.5V to 5.5V
Param.
No.
D1
D2
D3
D4
D5
D6
D7
Symbol
V IH 1
V IH 2
V IL 1
V IL 2
V OL 1
V OL 2
V OH 1
V OH 2
I LI
I LO
C IN ,
Parameter
High-level input voltage
Low-level input voltage
Low-level output voltage
High-level output voltage
Input leakage current
Output leakage current
Pin capacitance (all inputs/
Min.
2.0
0.7 V CC
-0.3
-0.3
—
—
2.4
V CC - 0.2
—
—
—
Typ.
—
—
—
—
—
—
—
—
—
—
—
Max.
V CC +1
V CC +1
0.8
0.2 V CC
0.4
0.2
—
—
±1
±1
7
Units
V
V
V
V
V
V
V
V
? A
? A
pF
Conditions
V CC ?? 2.7V
V CC < 2.7V
V CC ?? 2.7V
V CC < 2.7V
I OL = 2.1 mA, V CC = 4.5V
I OL = 100 ? A, V CC = 2.5V
I OH = -400 ? A, V CC = 4.5V
I OH = -100 ? A, V CC = 2.5V
V IN = V SS or V CC
V OUT = V SS or V CC
V IN /V OUT = 0V (Note 1)
C OUT
outputs)
T A = 25°C, F CLK = 1 MHz
D8
D9
I CC write Write current
I CC read Read current
—
—
—
—
—
—
500
—
—
100
3
—
1
500
—
mA
? A
mA
? A
? A
F CLK = 3 MHz, V CC = 5.5V
F CLK = 2 MHz, V CC = 2.5V
F CLK = 3 MHz, V CC = 5.5V
F CLK = 2 MHz, V CC = 3.0V
F CLK = 2 MHz, V CC = 2.5V
D10
I CCS
Standby current
—
—
1
? A
I – Temp
—
—
5
? A
E – Temp
CLK = CS = 0V
ORG = DI
PE = V SS or V CC
(Note 2) (Note 3)
D11
V POR
V CC voltage detect
(Note 1)
—
—
1.5
3.8
—
—
V
V
93AA86A/B/C, 93LC86A/B/C
93C86A/B/C
Note 1:
2:
3:
This parameter is periodically sampled and not 100% tested.
ORG and PE pin not available on ‘A’ or ‘B’ versions.
Ready/ Busy status must be cleared from DO; see Section 3.4 “Data Out (DO)” .
? 2003-2012 Microchip Technology Inc.
DS21797L-page 3
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