参数资料
型号: 93LC66A-I/SM
元件分类: PROM
英文描述: 512 X 8 MICROWIRE BUS SERIAL EEPROM, PDSO8
封装: 0.208 INCH, PLASTIC, SOIC-8
文件页数: 9/12页
文件大小: 226K
代理商: 93LC66A-I/SM
93LC66A/B
DS21209C-page 6
1998 Microchip Technology Inc.
3.6
ERASE/WRITE Disable and Enable
(EWDS/EWEN)
The 93LC66A/B powers up in the ERASE/WRITE Dis-
able (EWDS) state. All programming modes must be
preceded by an ERASE/WRITE Enable (EWEN)
instruction. Once the EWEN instruction is executed,
programming remains enabled until an EWDS instruc-
tion is executed or Vcc is removed from the device. To
protect against accidental data disturbance, the EWDS
instruction can be used to disable all ERASE/WRITE
functions and should follow all programming opera-
tions. Execution of a READ instruction is independent
of both the EWDS and EWEN instructions.
3.7
READ
The READ instruction outputs the serial data of the
addressed memory location on the DO pin. A dummy
zero bit precedes the 8-bit (93LC66A) or 16-bit
(93LC66B) output string. The output data bits will tog-
gle on the rising edge of the CLK and are stable after
the specified time delay (TPD). Sequential read is pos-
sible when CS is held high. The memory data will auto-
matically cycle to the next register and output
sequentially.
FIGURE 3-4:
EWDS TIMING
FIGURE 3-5:
EWEN TIMING
FIGURE 3-6:
READ TIMING
CS
CLK
DI
10
00
0
X
X
TCSL
1X
CS
CLK
DI
00
1
X
TCSL
CS
CLK
DI
DO
11
0
An
A0
HIGH-Z
0Dx
D0
Dx
D0
Dx
D0
相关PDF资料
PDF描述
93LC66BXT/SNJ22 256 X 16 MICROWIRE BUS SERIAL EEPROM, PDSO8
93LC66B/SM 256 X 16 MICROWIRE BUS SERIAL EEPROM, PDSO8
93LC66B/PD22 256 X 16 MICROWIRE BUS SERIAL EEPROM, PDIP8
93LC66B/P 256 X 16 MICROWIRE BUS SERIAL EEPROM, PDIP8
93LC66B/ST 256 X 16 MICROWIRE BUS SERIAL EEPROM, PDSO8
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93LC66AT-E/MNY 功能描述:电可擦除可编程只读存储器 4K 512X8 SER EE,EXT RoHS:否 制造商:Atmel 存储容量:2 Kbit 组织:256 B x 8 数据保留:100 yr 最大时钟频率:1000 KHz 最大工作电流:6 uA 工作电源电压:1.7 V to 5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8
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