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参数资料
| 型号： | 93LC66BI/SM |
| 元件分类： | PROM |
| 英文描述： | 256 X 16 MICROWIRE BUS SERIAL EEPROM, PDSO8 |
| 封装： | 0.207 INCH, EIAJ, PLASTIC, SOIC-8 |
| 文件页数： | 10/12页 |
| 文件大小： | 226K |
| 代理商： | 93LC66BI/SM |
93LC66A/B
1998 Microchip Technology Inc.
DS21209C-page 7
3.8
WRITE
The WRITE instruction is followed by 8 bits (93LC66A)
or 16 bits (93LC66B) of data which are written into the
specified address. After the last data bit is put on the DI
pin, the falling edge of CS initiates the self-timed auto-
erase and programming cycle.
The DO pin indicates the READY/BUSY status of the
device, if CS is brought high after a minimum of 250 ns
low (TCSL) and before the entire write cycle is complete.
DO at logical “0” indicates that programming is still in
progress. DO at logical “1” indicates that the register at
the specified address has been written with the data
specified and the device is ready for another instruc-
tion.
3.9
Write All (WRAL)
The Write All (WRAL) instruction will write the entire
memory array with the data specified in the command.
The WRAL cycle is completely self-timed and com-
mences at the falling edge of the CS. Clocking of the
CLK pin is not necessary after the device has entered
the WRAL cycle. The WRAL command does include an
automatic ERAL cycle for the device. Therefore, the
WRAL instruction does not require an ERAL instruc-
tion, but the chip must be in the EWEN status.
The DO pin indicates the READY/BUSY status of the
device if CS is brought high after a minimum of 250 ns
low (TCSL).
FIGURE 3-7:
WRITE TIMING
FIGURE 3-8:
WRAL TIMING
CS
CLK
DI
DO
1
0
1An
A0
Dx
D0
BUSY
READY
HIGH-Z
Twc
TCSL
TCZ
TSV
CS
CLK
DI
DO
HIGH-Z
1
0
01
X
X
Dx
D0
HIGH-Z
BUSY
READY
TWL
Guaranteed at Vcc = 4.5V to +6.0V.
TCSL
TSV
TCZ
相关PDF资料 |
PDF描述 |
|---|---|
| 93LC66B/PROC | 256 X 16 MICROWIRE BUS SERIAL EEPROM, PDIP8 |
| 93LC66BT/ST102 | 256 X 16 MICROWIRE BUS SERIAL EEPROM, PDSO8 |
| 93LC66A/ST | 512 X 8 MICROWIRE BUS SERIAL EEPROM, PDSO8 |
| 93LC66BT/ST101 | 256 X 16 MICROWIRE BUS SERIAL EEPROM, PDSO8 |
| 93LC66AT/SM | 512 X 8 MICROWIRE BUS SERIAL EEPROM, PDSO8 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 93LC66B-SN | 制造商:Microchip Technology Inc 功能描述: |
| 93LC66BT/SN | 功能描述:电可擦除可编程只读存储器 256x16 RoHS:否 制造商:Atmel 存储容量:2 Kbit 组织:256 B x 8 数据保留:100 yr 最大时钟频率:1000 KHz 最大工作电流:6 uA 工作电源电压:1.7 V to 5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 |
| 93LC66BT/ST | 功能描述:电可擦除可编程只读存储器 256x16 RoHS:否 制造商:Atmel 存储容量:2 Kbit 组织:256 B x 8 数据保留:100 yr 最大时钟频率:1000 KHz 最大工作电流:6 uA 工作电源电压:1.7 V to 5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 |
| 93LC66BT-E/MNY | 功能描述:电可擦除可编程只读存储器 4K, 256 X 16 SERIAL EE,EXT RoHS:否 制造商:Atmel 存储容量:2 Kbit 组织:256 B x 8 数据保留:100 yr 最大时钟频率:1000 KHz 最大工作电流:6 uA 工作电源电压:1.7 V to 5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 |
| 93LC66BT-E/MS | 功能描述:电可擦除可编程只读存储器 256x16 RoHS:否 制造商:Atmel 存储容量:2 Kbit 组织:256 B x 8 数据保留:100 yr 最大时钟频率:1000 KHz 最大工作电流:6 uA 工作电源电压:1.7 V to 5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 |
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