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参数资料
| 型号： | 93LC66BI/SM |
| 元件分类： | PROM |
| 英文描述： | 256 X 16 MICROWIRE BUS SERIAL EEPROM, PDSO8 |
| 封装： | 0.207 INCH, EIAJ, PLASTIC, SOIC-8 |
| 文件页数： | 8/12页 |
| 文件大小： | 226K |
| 代理商： | 93LC66BI/SM |
93LC66A/B
1998 Microchip Technology Inc.
DS21209C-page 5
3.4
ERASE
The ERASE instruction forces all data bits of the spec-
ified address to the logical “1” state. CS is brought low
following the loading of the last address bit. This falling
edge of the CS pin initiates the self-timed programming
cycle.
The DO pin indicates the READY/BUSY status of the
device if CS is brought high after a minimum of 250 ns
low (TCSL). DO at logical “0” indicates that program-
ming is still in progress. DO at logical “1” indicates that
the register at the specified address has been erased
and the device is ready for another instruction.
3.5
Erase All (ERAL)
The Erase All (ERAL) instruction will erase the entire
memory array to the logical “1” state. The ERAL cycle
is identical to the ERASE cycle except for the different
opcode. The ERAL cycle is completely self-timed and
commences at the falling edge of the CS. Clocking of
the CLK pin is not necessary after the device has
entered the ERAL cycle.
The DO pin indicates the READY/BUSY status of the
device if CS is brought high after a minimum of 250 ns
low (TCSL) and before the entire ERAL cycle is com-
plete.
FIGURE 3-2:
ERASE TIMING
FIGURE 3-3:
ERAL TIMING
CS
CLK
DI
DO
TCSL
CHECK STATUS
1
1AN
AN-1
AN-2
A0
TSV
TCZ
BUSY
READY
HIGH-Z
TWC
HIGH-Z
CS
CLK
DI
DO
TCSL
CHECK STATUS
10
0
1
0
X
X
TSV
TCZ
BUSY
READY
HIGH-Z
TEC
HIGH-Z
Guaranteed at Vcc = 4.5V to +6.0V.
相关PDF资料 |
PDF描述 |
|---|---|
| 93LC66B/PROC | 256 X 16 MICROWIRE BUS SERIAL EEPROM, PDIP8 |
| 93LC66BT/ST102 | 256 X 16 MICROWIRE BUS SERIAL EEPROM, PDSO8 |
| 93LC66A/ST | 512 X 8 MICROWIRE BUS SERIAL EEPROM, PDSO8 |
| 93LC66BT/ST101 | 256 X 16 MICROWIRE BUS SERIAL EEPROM, PDSO8 |
| 93LC66AT/SM | 512 X 8 MICROWIRE BUS SERIAL EEPROM, PDSO8 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 93LC66B-SN | 制造商:Microchip Technology Inc 功能描述: |
| 93LC66BT/SN | 功能描述:电可擦除可编程只读存储器 256x16 RoHS:否 制造商:Atmel 存储容量:2 Kbit 组织:256 B x 8 数据保留:100 yr 最大时钟频率:1000 KHz 最大工作电流:6 uA 工作电源电压:1.7 V to 5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 |
| 93LC66BT/ST | 功能描述:电可擦除可编程只读存储器 256x16 RoHS:否 制造商:Atmel 存储容量:2 Kbit 组织:256 B x 8 数据保留:100 yr 最大时钟频率:1000 KHz 最大工作电流:6 uA 工作电源电压:1.7 V to 5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 |
| 93LC66BT-E/MNY | 功能描述:电可擦除可编程只读存储器 4K, 256 X 16 SERIAL EE,EXT RoHS:否 制造商:Atmel 存储容量:2 Kbit 组织:256 B x 8 数据保留:100 yr 最大时钟频率:1000 KHz 最大工作电流:6 uA 工作电源电压:1.7 V to 5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 |
| 93LC66BT-E/MS | 功能描述:电可擦除可编程只读存储器 256x16 RoHS:否 制造商:Atmel 存储容量:2 Kbit 组织:256 B x 8 数据保留:100 yr 最大时钟频率:1000 KHz 最大工作电流:6 uA 工作电源电压:1.7 V to 5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 |
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