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参数资料
| 型号： | 98822 |
| 厂商： | IXYS Corporation |
| 英文描述： | High Voltage MOSFET |
| 中文描述： | 高电压MOSFET |
| 文件页数： | 1/2页 |
| 文件大小： | 60K |
| 代理商： | 98822 |
Symbol
Test Conditions
Maximum Ratings
V
DSS
T
J
= 25
°C to 150°C
800
V
V
DGR
T
J
= 25
°C to 150°C; R
GS = 1 M
800
V
V
GS
Continuous
±20
V
V
GSM
Transient
±30
V
I
D25
T
C
= 25
°C
750
mA
I
DM
T
C
= 25
°C, pulse width limited by T
JM
3A
I
AR
1.0
A
E
AR
T
C
= 25
°C5
mJ
E
AS
T
C
= 25
°C
100
mJ
dv/dt
I
S
≤ I
DM, di/dt ≤ 100 A/s, VDD ≤ VDSS,
3
V/ns
T
J
≤ 150°C, R
G = 47
P
D
T
C
= 25
°C40
W
T
J
-55 ... +150
°C
T
JM
150
°C
T
stg
-55 ... +150
°C
M
d
Mounting torque
1.13/10 Nm/lb.in.
Weight
TO-220
4
g
TO-252
0.8
g
TO-263
3
g
Maximum lead temperature for soldering
300
°C
1.6 mm (0.062 in.) from case for 10 s
High Voltage MOSFET
G = Gate,
D = Drain,
S = Source,
TAB = Drain
D (TAB)
Symbol
Test Conditions
Characteristic Values
(T
J = 25°C, unless otherwise specified)
min.
typ.
max.
V
DSS
V
GS
= 0 V, I
D = 250 A
800
V
V
GS(th)
V
DS
= V
GS, ID = 25 A
2.5
4.5
V
I
GSS
V
GS
=
±20 V
DC, VDS = 0
±100
nA
I
DSS
V
DS
= V
DSS
T
J = 25°C25
A
V
GS = 0 V
T
J = 125°C
500
A
R
DS(on)
V
GS
= 10 V, I
D = 500 mA
9.5
11
Pulse test, t
≤ 300 s, duty cycle d ≤ 2 %
Features
! International standard packages
! High voltage, Low R
DS (on) HDMOS
TM
process
! Rugged polysilicon gate cell structure
! Fast switching times
Applications
! Switch-mode and resonant-mode
power supplies
! Flyback inverters
! DC choppers
! High frequency matching
Advantages
! Space savings
! High power density
DS98822C(11/03)
G D
S
TO-220AB (IXTP)
2003 IXYS All rights reserved
G
S
TO-263 AA (IXTA)
D (TAB)
N-Channel Enhancement Mode
Avalanche Energy Rated
IXTA 1N80
IXTP 1N80
IXTY 1N80
V
DSS
= 800
V
I
D25
= 750 mA
R
DS(on)
= 11
Preliminary Data
TO-252 AA (IXTY)
G
S
D (TAB)
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相关代理商/技术参数 |
参数描述 |
|---|---|
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