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参数资料
| 型号： | 992215735011 |
| 厂商： | NXP SEMICONDUCTORS |
| 元件分类： | 模拟信号调理 |
| 英文描述： | SPECIALTY ANALOG CIRCUIT, CPGA76 |
| 封装： | PGA-76 |
| 文件页数： | 6/17页 |
| 文件大小： | 171K |
| 代理商： | 992215735011 |
1999 September
14
Philips Semiconductors
Product specification
Frame Transfer CCD Image Sensor
FTT1010-M
Figure 12 - Application diagram to protect the FTT1010-M
Device Handling
An image sensor is a MOS device which can be destroyed by electro-
static discharge (ESD). Therefore, the device should be handled
with care.
Always store the device with short-circuiting clamps or on conductive
foam. Always switch off all electric signals when inserting or removing
the sensor into or from a camera (the ESD protection in the CCD
image sensor process is less effective than the ESD protection of
standard CMOS circuits).
Being a high quality optical device, it is important that the cover
glass remain undamaged. When handling the sensor, use fingercots.
When cleaning the glass we recommend using ethanol (or possibly
water). Use of other liquids is strongly discouraged:
if the cleaning liquid evaporates too quickly, rubbing is likely to
cause ESD damage.
the cover glass and its coating can be damaged by other liquids.
Rub the window carefully and slowly.
Dry rubbing of the window may cause electro-static charges or
scratches which can destroy the device.
BAT74
Schottky!
VPS
SFD
VRD
BC
860C
BC
850C
VNS
+
-
1uF
100nF
2mA
BC
850C
0.5-1mA
27
15
10k
CR pulse
0
0.5-1mA
VCS
VOG
10k
OUT
<7pF!
keep short
<10mm!
keep short!
output for
preprocessing
BFR
92A
1k
3.3k
10mA
100nF
BAT74
0.5-1mA
BAT74
Schottky!
100
VSFD
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