- 您现在的位置：买卖IC网 > PDF目录48362 > A20M18LVR 100 A, 200 V, 0.018 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA PDF资料下载
参数资料
| 型号： | A20M18LVR |
| 元件分类： | JFETs |
| 英文描述： | 100 A, 200 V, 0.018 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA |
| 封装： | TO-264, 3 PIN |
| 文件页数： | 3/4页 |
| 文件大小： | 155K |
| 代理商： | A20M18LVR |
050-5910
Rev
A
5-2004
Typical Performance Curves
APT20M18B2VR_LVR
R
DS
(ON),
DRAIN-TO-SOURCE
ON
RESISTANCE
I D
,DRAIN
CURRENT
(AMPERES)
I D
,DRAIN
CURRENT
(AMPERES)
(NORMALIZED)
V
GS
(TH),
THRESHOLD
VOLTAGE
BV
DSS
,DRAIN-TO-SOURCE
BREAKDOWN
R
DS
(ON),
DRAIN-TO-SOURCE
ON
RESISTANCE
I D
,DRAIN
CURRENT
(AMPERES)
(NORMALIZED)
VOLTAGE
(NORMALIZED)
4.5V
6.5V
5V
5.5V
6V
VGS =15 &10 V
7V
TJ = +125°C
TJ = +25°C
TJ = -55°C
VDS> ID (ON) x RDS (ON)MAX.
250 SEC. PULSE TEST
@ <0.5 % DUTY CYCLE
VGS=10V
VGS=20V
V
DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL
FIGURE3,LOW VOLTAGE OUTPUTCHARACTERISTICS
V
GS, GATE-TO-SOURCE VOLTAGE (VOLTS)
I
D, DRAIN CURRENT (AMPERES)
FIGURE4, TRANSFERCHARACTERISTICS
FIGURE 5, R
DS(ON) vs DRAIN CURRENT
T
C, CASE TEMPERATURE (°C)
T
J, JUNCTION TEMPERATURE (°C)
FIGURE6,MAXIMUMDRAINCURRENTvsCASETEMPERATURE
FIGURE7,BREAKDOWNVOLTAGEvsTEMPERATURE
T
J, JUNCTION TEMPERATURE (°C)
T
C, CASE TEMPERATURE (°C)
FIGURE8,ON-RESISTANCEvs.TEMPERATURE
FIGURE9,THRESHOLDVOLTAGEvsTEMPERATURE
250
200
150
100
50
0
1.40
1.30
1.20
1.10
1.00
0.90
0.80
1.15
1.10
1.05
1.00
0.95
0.90
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0
5
10
15
20
25
30
0
1
2
3
4
5
6
7
0
20
40
60
80 100 120 140 160 180
25
50
75
100
125
150
-50
-25
0
25
50
75
100 125 150
-50
-25
0
25
50
75
100 125 150
-50
-25
0
25
50
75 100 125 150
120
100
80
60
40
20
0
100
80
60
40
20
0
2.5
2.0
1.5
1.0
0.5
0.0
NORMALIZED TO
V
GS = 10V @ 50A
I
D = 50A
V
GS = 10V
0.0302
0.0729
0.0955
0.00809F
0.0182F
0.264F
Power
(watts)
Junction
temp. (
°C)
RC MODEL
Case temperature. (
°C)
相关PDF资料 |
PDF描述 |
|---|---|
| APT20M18B2VR | 100 A, 200 V, 0.018 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APT20M18B2VR | 100 A, 200 V, 0.018 ohm, N-CHANNEL, Si, POWER, MOSFET |
| A5T3638A | 500 mA, 25 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| A5T3638 | 500 mA, 25 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| AF70N03D | 60 A, 30 V, 0.009 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| A20MB | 制造商:Farnell / Pro-Power 功能描述:ADAPTOR FEMALE 20MM 制造商:pro-power 功能描述:ADAPTOR, FEMALE, 20MM |
| A-20MHZ-20-3RD | 制造商:Raltron Electronics Corporation 功能描述: |
| A20MIC 3M269XA DISC 12" | 功能描述:LAPPING FILM ALUM OXIDE 269XA RoHS:是 类别:工具 >> 光纤和配件 系列:Trizact™, 269XA MSDS 材料安全数据表:8234 MSDS 标准包装:10 系列:* |
| A20MIC 3M269XA DISC 8" | 功能描述:LAPPING FILM ALUM OXIDE 269XA RoHS:是 类别:工具 >> 光纤和配件 系列:Trizact™, 269XA MSDS 材料安全数据表:8234 MSDS 标准包装:10 系列:* |
| A20N100J1ETA52F | 制造商:DBLECTRO 制造商全称:DB Lectro Inc 功能描述:RoHS Compliant Axial Multilayer Ceramic Capacitor |
发布紧急采购，3分钟左右您将得到回复。