参数资料
型号: A29002SERIES
英文描述: 256K X 8 Bit CMOS 5.0 Volt-only. Boot Sector Flash Memory
中文描述: 256K × 8位CMOS 5.0伏特只。引导扇区闪存
文件页数: 1/32页
文件大小: 316K
代理商: A29002SERIES
A29001/290011 Series
128K X 8 Bit CMOS 5.0 Volt-only,
Boot Sector Flash Memory
Preliminary
Features
n
5.0V
±
10% for read and write operations
n
Access times:
- 55/70/90 (max.)
n
Current:
- 20 mA typical active read current
- 30 mA typical program/erase current
- 1
μ
A typical CMOS standby
n
Flexible sector architecture
-
8 Kbyte/ 4 KbyteX2/ 16 Kbyte/ 32 KbyteX3 sectors
-
Any combination of sectors can be erased
-
Supports full chip erase
-
Sector protection:
A hardware method of protecting sectors to prevent
any inadvertent program or erase operations within
that sector
n
Top or bottom boot block configurations available
n
Embedded Erase Algorithms
- Embedded Erase algorithm will automatically erase the
entire chip or any combination of designated sectors
and verify the erased sectors
- Embedded Program algorithm automatically writes and
verifies bytes at specified addresses
PRELIMINARY (December, 2002, Version 0.4)
1
AMIC Technology, Corp.
n
Typical 100,000 program/erase cycles per sector
n
20-year data retention at 125
°
C
- Reliable operation for the life of the system
n
Compatible with JEDEC-standards
- Pinout and software compatible with single-power-
supply Flash memory standard
-
Superior inadvertent write protection
n
Data
Polling and toggle bits
-
Provides a software method of detecting completion of
program or erase operations
n
Erase Suspend/Erase Resume
-
Suspends a sector erase operation to read data from,
or program data to, a non-erasing sector, then
resumes the erase operation
n
Hardware reset pin (
RESET
)
-
Hardware method to reset the device to reading array
data (not available on A290011)
n
Package options
-
32-pin P-DIP, PLCC, or TSOP (Forward type)
General Description
The A29001 is a 5.0 volt-only Flash memory organized as
131,072 bytes of 8 bits each. The A29001 offers the
RESET
function, but it is not available on A290011. The 128 Kbytes of
data are further divided into seven sectors for flexible sector
erase capability. The 8 bits of data appear on I/O
0
- I/O
7
while
the addresses are input on A0 to A16. The A29001 is offered in
32-pin PLCC, TSOP, and PDIP packages. This device is
designed to be programmed in-system with the standard
system 5.0 volt VCC supply. Additional 12.0 volt VPP is not
required for in-system write or erase operations. However, the
A29001 can also be programmed in standard EPROM
programmers.
The A29001 has the first toggle bit, I/O
6
, which indicates
whether an Embedded Program or Erase is in progress, or it is
in the Erase Suspend. Besides the I/O
6
toggle bit, the A29001
has a second toggle bit, I/O
2
, to indicate whether the
addressed sector is being selected for erase. The A29001 also
offers the ability to program in the Erase Suspend mode. The
standard A29001 offers access times of 55, 70 and 90 ns
allowing high-speed microprocessors to operate without wait
states. To eliminate bus contention the device has separate
chip enable (
CE
), write enable (
WE
) and output enable (
OE
)
controls.
The device requires only a single 5.0 volt power supply for both
read and write functions. Internally generated and regulated
voltages are provided for the program and erase operations.
The A29001 is entirely software command set compatible with
the JEDEC single-power-supply Flash standard. Commands
are written to the command register using standard
microprocessor write timings. Register contents serve as input
to an internal state-machine that controls the erase and
programming circuitry. Write cycles also internally latch
addresses and data needed for the programming and erase
operations. Reading data out of the device is similar to reading
from other Flash or EPROM devices.
Device programming occurs by writing the proper program
command sequence. This initiates the Embedded Program
algorithm - an internal algorithm that automatically times the
program pulse widths and verifies proper program margin.
Device erasure occurs by executing the proper erase
command sequence. This initiates the Embedded Erase
algorithm
-
an
internal
algorithm
preprograms the array (if it is not already programmed) before
executing the erase operation. During erase, the device
automatically times the erase pulse widths and verifies proper
erase margin.
that
automatically
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