参数资料
型号: A29DL323SERIES
英文描述: 32M-Bit CMOS Low Voltage Dual Operation Flash Memory 4M-Byte by 8-Bit (Byte Mode) / 2M-Word by 16-Bit
中文描述: 32兆位的CMOS低电压双操作闪存分字节由8位(字节模式)/ 200万词由16位
文件页数: 16/46页
文件大小: 467K
代理商: A29DL323SERIES
A29DL323 Series
PRELIMINARY (May, 2002, Version 0.0)
16
AMIC Technology, Inc.
Extra One Time Protect Sector Erase
To erase the Extra One Time Protect Sector area, write the
Extra One Time Protect Sector erase command sequence in
the Extra One Time Protect Sector mode. This command is
the same as the conventional sector erase command except
that it must be written in the Extra One Time Protect Sector
mode. Therefore, completion of execution of this command is
detected in the same manner as the conventional detection
method of using I/O
7
data polling, I/O
6
toggle bit, and
RY/
BY
. Care must be exercised in selecting a sector
address to erase. If a sector address other than the one in
the Extra One Time Protect Sector area is selected, the data
of that sector is changed.
Extra One Time Protect Sector Protection
The following write operations are used to protect the Extra
One Time Protect area during the Extra One Time Protect
Sector mode.
Write the sector group protection setup command (60H) in
the Extra One Time Protect Sector mode.
.
Set (A6, A1, A0) = (V
IL
, V
IH
, V
IL
), and set the sector address
that selects the Extra One Time Protect Sector.
.
Write the sector group protection command (60H).
Because the sequence is the same as the conventional
command sequence to protect a sector group except that the
Extra One Time Protect Sector mode must be set and that
VID is not input to the
RESET
, the same command
sequence can be used.
For details of how to protect a sector group, refer to Sector
Group Protection.
If an address other than the one of the Extra One Time
Protect Sector area is specified as a sector address, the
other sectors are affected. Once the sector has been
protected, protection can never be canceled. Exercise utmost
care when protecting a sector.
Hardware Data Protection
This device requires two unlock cycles for program / erase
command sequence to prevent illegal program / erase.
Moreover, a hardware data protect function is provided as
follows.
Low VCC Write Inhibit
To prevent an illegal write cycle during VCC transition, the
command register and program / erase circuit is disabled and
all write cycles are ignored while VCC is V
LKO
or lower. Write
commands are ignored until VCC becomes equal to or
greater than V
LKO
.
Logical Inhibit
The write cycle is inhibited under any of the following
conditions :
OE
= V
IL
,
CE
= V
IH
, or
WE
= V
IH
. To start a
write cycle,
CE
= V
IL
and
WE
= V
IL
must be set while /OE =
V
IH
.
Power-Up Write Inhibit
Even if
WE
=
CE
= V
IL
and
OE
= V
IH
are satisfied at
power-up, no commands are accepted at the rising edge of
WE
. The device is automatically reset to the read mode at
power ON.
Write Pulse "Glitch" Protection
Because
OE
,
CE
, and /WE reject a noise pulse of 5 ns
(typical) or less as an invalid pulse, a write operation is not
started.
Sector Group Protection
The dual operation flash memory can be protected by the
user in sector group units. For details, refer to Sector Group
Protection.
相关PDF资料
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A29DL324SERIES 32M-Bit CMOS Low Voltage Dual Operation Flash Memory 4M-Byte by 8-Bit (Byte Mode) / 2M-Word by 16-Bit
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A29L160SERIES 2M X 8 Bit / 1M X 16 Bit CMOS 3.0 Volt-only. Boot Sector Flash Memory
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