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参数资料
| 型号： | A29DL323SERIES |
| 英文描述： | 32M-Bit CMOS Low Voltage Dual Operation Flash Memory 4M-Byte by 8-Bit (Byte Mode) / 2M-Word by 16-Bit |
| 中文描述： | 32兆位的CMOS低电压双操作闪存分字节由8位（字节模式）/ 200万词由16位 |
| 文件页数： | 7/46页 |
| 文件大小： | 467K |
| 代理商： | A29DL323SERIES |
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A29DL323 Series
PRELIMINARY (May, 2002, Version 0.0)
7
AMIC Technology, Inc.
Boot Block Sector Protect
The boot block sector protect mode protects the two sectors
of the boot block. This mode is set when V
IL
is input to
WP
(ACC). If V
IL
is input to
WP
(ACC) even in the temporary
sector group unprotect mode, the boot block remains
protected and protection of the other sectors is temporarily
canceled.
Accelerated Mode
This mode is used to program the device at high speed,
and the programming time can be shortened to about 60%.
To program the device in the accelerated mode, input
VACC to
WP
(ACC) and use an unlock bypass program
command. Therefore, ordinary commands can be used for
programming or detection of completion of programming.
If VACC is input to
WP
(ACC), the device is automatically
set in the unlock bypass mode. Therefore, the unlock
bypass set command and reset command are not
necessary. The accelerated mode is automatically canceled
if the input of VACC to
WP
(ACC) is stopped.
In the accelerated mode, protection of the sector group is
temporarily canceled. Exercise care in programming the
device at this time.
For the timing waveform, refer to Timing Waveform for
Accelerated Mode.
Dual Operation
This device can execute a program or erase operation and
a read operation simultaneously. By selecting bank 1 or 2
by changing the bank address, one bank can execute a
read operation while the other bank is executing a program
or erase operation. When changing the bank address, no
wait cycle is necessary. Note that two or more program or
erase operation. When changing the bank address, no wait
cycle is necessary. Note that two or more operations cannot
be executed at the same time in the same bank.
The following table shows the combinations of bank
operations.
For the timing waveform, refer to Timing Waveform for Dual
Operation.
Table 2. Dual Operation
Case
1
2
3
4
5
6
7
Operation of Bank 1
Read mode
Read mode
Read mode
Read mode
Product ID
Program (Note 1)
Erase (Note 2)
Operation of Bank 2
Read mode
Product ID
Program (Note 1)
Erase (Note 2)
Read mode
Read mode
Read mode
Notes 1. The program operation is suspended by the program suspend command, and addresses not
being programmed to at this time can only be read.
2. The erase operation is suspended by the erase suspend command. The sector not erased at
this time can be read or programmed.
相关PDF资料 |
PDF描述 |
|---|---|
| A29DL324SERIES | 32M-Bit CMOS Low Voltage Dual Operation Flash Memory 4M-Byte by 8-Bit (Byte Mode) / 2M-Word by 16-Bit |
| A29L040SERIES | 512K X 8 Bit CMOS 3.0 Volt-only. Uniform Sector Flash Memory |
| A29L160SERIES | 2M X 8 Bit / 1M X 16 Bit CMOS 3.0 Volt-only. Boot Sector Flash Memory |
| A29L400SERIES | 512K X 8 Bit / 256K X 16 Bit CMOS 3.0 Volt-only. Boot Sector Flash Memory |
| A29L800SERIES | 1M X 8 Bit / 512K X 16 Bit CMOS 3.0 Volt-only. Boot Sector Flash Memory |
相关代理商/技术参数 |
参数描述 |
|---|---|
| A29DL323TG-120 | 制造商:AMICC 制造商全称:AMIC Technology 功能描述:32 Megabit (4M x 8-Bit/2M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory |
| A29DL323TG-70 | 制造商:AMICC 制造商全称:AMIC Technology 功能描述:32 Megabit (4M x 8-Bit/2M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory |
| A29DL323TG-80 | 制造商:AMICC 制造商全称:AMIC Technology 功能描述:32 Megabit (4M x 8-Bit/2M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory |
| A29DL323TG-90 | 制造商:AMICC 制造商全称:AMIC Technology 功能描述:32M-Bit CMOS Low Voltage Dual Operation Flash Memory 4M-Byte by 8-Bit (Byte Mode) / 2M-Word by 16-Bit (Word Mode) |
| A29DL323TV-120 | 制造商:AMICC 制造商全称:AMIC Technology 功能描述:32 Megabit (4M x 8-Bit/2M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory |
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