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| 型号： | A29L040SERIES |
| 英文描述： | 512K X 8 Bit CMOS 3.0 Volt-only. Uniform Sector Flash Memory |
| 中文描述： | 为512k × 8位CMOS 3.0伏特只。统一部门闪存 |
| 文件页数： | 24/30页 |
| 文件大小： | 285K |
| 代理商： | A29L040SERIES |
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A29L040 Series
PRELIMINARY (December, 2002, Version 0.0)
24
AMIC Technology, Corp.
Timing Waveforms for Alternate
CE
Controlled Write Operation
Erase and Programming Performance
Parameter
Typ. (Note 1)
Max. (Note 2)
Unit
Comments
Sector Erase Time
Chip Erase Time
Byte Programming Time
1
8
35
8
64
300
sec
sec
Excludes 00h programming
prior to erasure (Note 4)
μ
s
sec
Chip Programming Time (Note 3)
3.6
10.8
Excludes system-level
overhead (Note 5)
Notes:
1. Typical program and erase times assume the following conditions: 25
°
C, 3.0V VCC, 100,000 cycles. Additionally,
programming typically assumes checkerboard pattern.
2. Under worst case conditions of 90
°
C, VCC = 2.7V, 100,000 cycles.
3. The typical chip programming time is considerably less than the maximum chip programming time listed, since most bytes
program faster than the maximum byte program time listed. If the maximum byte program time given is exceeded, only
then does the device set I/O
5
= 1. See the section on I/O
5
for further information.
4. In the pre-programming step of the Embedded Erase algorithm, all bytes are programmed to 00h before erasure.
5. System-level overhead is the time required to execute the four-bus-cycle command sequence for programming. See
Table 4 for further information on command definitions.
6. The device has a guaranteed minimum erase and program cycle endurance of 100,000 cycles.
Addresses
WE
OE
CE
Data
555 for program
2AA for erase
PA
D
OUT
~
~
I/O
7
~
~
~
Data Polling
Note :
1. PA = Program Address, PD = Program Data, SA = Sector Address, I/O
7
= Complement of Data Input, D
OUT
= Array Data.
2. Figure indicates the last two bus cycles of the command sequence.
PD for program
30 for sector erase
10 for chip erase
~
t
BUSY
t
WHWH1 or 2
t
AH
t
AS
t
WC
t
WH
t
GHEL
t
CP
t
WS
t
CPH
PA for program
SA for sector erase
555 for chip erase
A0 for program
55 for erase
t
RH
t
DS
t
DH
相关PDF资料 |
PDF描述 |
|---|---|
| A29L160SERIES | 2M X 8 Bit / 1M X 16 Bit CMOS 3.0 Volt-only. Boot Sector Flash Memory |
| A29L400SERIES | 512K X 8 Bit / 256K X 16 Bit CMOS 3.0 Volt-only. Boot Sector Flash Memory |
| A29L800SERIES | 1M X 8 Bit / 512K X 16 Bit CMOS 3.0 Volt-only. Boot Sector Flash Memory |
| A31-1 | 10 TO 2000 MHz CECASCADABLE AMPLIFIER |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| A29L040V | 制造商:AMICC 制造商全称:AMIC Technology 功能描述:512K X 8 Bit CMOS 3.0 Volt-only, Uniform Sector Flash Memory |
| A29L040V-55F | 制造商:AMICC 制造商全称:AMIC Technology 功能描述:512K X 8 Bit CMOS 3.0 Volt-only, Uniform Sector Flash Memory |
| A29L040V-55UF | 制造商:AMICC 制造商全称:AMIC Technology 功能描述:512K X 8 Bit CMOS 3.0 Volt-only, Uniform Sector Flash Memory |
| A29L040V-70 | 制造商:AMICC 制造商全称:AMIC Technology 功能描述:512K X 8 Bit CMOS 3.0 Volt-only, Uniform Sector Flash Memory |
| A29L040V-70F | 制造商:AMIC Technology 功能描述:MEMORY FLASH NOR 3V 4M 32TSOP |
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