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参数资料
| 型号： | A428316SERIES |
| 英文描述： | 256K X 16 CMOS DYNAMIC RAM WITH EDO PAGE MODE |
| 中文描述： | 256 × 16的CMOS动态RAM与江户页面模式 |
| 文件页数： | 3/25页 |
| 文件大小： | 272K |
| 代理商： | A428316SERIES |
A428316 Series
PRELIMINARY
(August, 2002, Version 0.3)
2
AMIC Technology, Inc.
Selection Guide
Symbol
Description
-25
-35
Unit
t
RAC
Maximum RAS Access Time
25
35
ns
t
AA
Maximum Column Address Access Time
12
17
ns
t
CAC
Maximum CAS Access Time
8
10
ns
t
OEA
Maximum Output Enable (OE) Access Time
8
10
ns
t
RC
Minimum Read or Write Cycle Time
44
62
ns
t
PC
Minimum EDO Cycle Time
12
16
ns
Functional Description
The A428316 reads and writes data by multiplexing an 18-
bit address into a 9-bit row and 9-bit column address.
RAS
and
CAS
are used to strobe the row address and the
column address, respectively.
The A428316 has two
CAS
inputs:
LCAS
controls I/O
0
-
I/O
7
, and
UCAS
controls I/O
8
-
I/O
15
,
UCAS
and
LCAS
function in an identical manner to
CAS
in that either will
generate an internal
CAS
signal. The
CAS
function and
timing are determined by the first
CAS
(
UCAS
or
LCAS
) to transition low and by the last to transition high.
Byte Read and Byte Write are controlled by using
LCAS
and
UCAS
separately.
A Read cycle is performed by holding the WE signal high
during RAS/
CAS
operation. A Write cycle is executed by
holding the WE signal low during RAS /
CAS
operation;
the input data is latched by the falling edge of WE or
CAS
, whichever occurs later. The data inputs and outputs
are routed through 16 common I/O pins, with RAS,
CAS
,
WE and OE controlling the in direction.
EDO Page Mode operation all 512 columns within a
selected row to be randomly accessed at a high data rate.
A EDO Page Mode cycle is initiated with a row address
latched by RAS followed by a column address latched by
CAS
. While holding RAS low,
CAS
can be toggled to
strobe changing column addresses, thus achieving shorter
cycle times.
The A428316 offers an accelerated Fast Page Mode cycle
through a feature called Extended Data Out, which keeps
the output drivers on during the
CAS
precharge time (t
cp
).
Since data can be output after
CAS
goes high, the user is
not required to wait for valid data to appear before starting
the next access cycle. Data-out will remain valid as long as
RAS and OE are low, and WE is high; this is the only
characteristic which differentiates Extended Data Out
operation from a standard Read or Fast Page Read.
A memory cycle is terminated by returning both RAS and
CAS
high. Memory cell data will retain its correct state by
maintaining power and accessing all 512 combinations of
the 9-bit row addresses, regardless of sequence, at least
once every 8ms through any RAS cycle (Read, Write) or
RAS Refresh cycle (RAS-only, CBR, or Hidden). The CBR
Refresh cycle automatically controls the row addresses by
invoking the refresh counter and controller.
Power-On
The initial application of the VCC supply requires a 200 μs
wait followed by a minimum of any eight initialization cycles
containing a RAS clock. During Power-On, the VCC
current is dependent on the input levels of RAS and
CAS
.
It is recommended that RAS and
CAS
track with VCC or
be held at a valid V
IH
during Power-On to avoid current
surges.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| A428316V | 制造商:AMICC 制造商全称:AMIC Technology 功能描述:256K X 16 CMOS DYNAMIC RAM WITH EDO PAGE MODE |
| A428316V-25 | 制造商:AMICC 制造商全称:AMIC Technology 功能描述:256K X 16 CMOS DYNAMIC RAM WITH EDO PAGE MODE |
| A428316V-25U | 制造商:AMICC 制造商全称:AMIC Technology 功能描述:256K X 16 CMOS DYNAMIC RAM WITH EDO PAGE MODE |
| A428316V-35 | 制造商:AMICC 制造商全称:AMIC Technology 功能描述:256K X 16 CMOS DYNAMIC RAM WITH EDO PAGE MODE |
| A428316V-35U | 制造商:AMICC 制造商全称:AMIC Technology 功能描述:256K X 16 CMOS DYNAMIC RAM WITH EDO PAGE MODE |
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