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参数资料
| 型号： | A428316SERIES |
| 英文描述： | 256K X 16 CMOS DYNAMIC RAM WITH EDO PAGE MODE |
| 中文描述： | 256 × 16的CMOS动态RAM与江户页面模式 |
| 文件页数： | 8/25页 |
| 文件大小： | 272K |
| 代理商： | A428316SERIES |
A428316 Series
PRELIMINARY (August, 2002, Version 0.3)
7
AMIC Technology, Inc.
AC Characteristics
(continued)
(VCC = 5.0V
±
10%, VSS = 0V, Ta = 0
°
C to +70
°
C or -40
°
C to +85
°
C)
Test Conditions:
Input timing reference level: V
IH
/V
IL
=2.4V/0.8V
Output reference level: V
OH
/V
OL
=2.0V/0.8V
Output Load: 2TTL gate + CL (50pF)
Assumed t
T
=2ns
-25
-35
#
Std
Symbol
Parameter
Min.
Max.
Min.
Max.
Unit
Notes
20
t
RRH
Read Command Hold Time Reference to RAS
0
-
0
-
ns
9
21
t
RAL
Column Address to RAS Lead Time
12
-
17
-
ns
22
t
COH
Output Hold After CAS Low
3
-
3
-
ns
23
t
OFF
Output Buffer Turn-Off Delay Time
-
3
-
3
ns
8, 10
24
t
ASC
Column Address Setup Time
0
-
0
-
ns
25
t
CAH
Column Address Hold Time
5
-
6
-
ns
26
t
OES
OE
Low to CAS High Set Up
5
-
7
-
ns
27
t
WCS
Write Command Setup Time
0
-
0
-
ns
11
28
t
WCH
Write Command Hold Time
5
-
6
-
ns
11
29
t
WCR
Write Command Hold Time to RAS
22
-
31
-
ns
30
t
WP
Write Command Pulse Width
5
-
6
-
ns
31
t
RWL
Write Command to RAS Lead Time
7
-
10
-
ns
32
t
CWL
Write Command to CAS Lead Time
5
-
7
-
ns
33
t
DS
Data-in setup Time
0
-
0
-
ns
12
34
t
DH
Data-in Hold Time
5
-
6
-
ns
12
35
t
DHR
Data-in Hold Time to RAS
22
-
31
-
ns
36
t
RWC
Read-Modify-Write Cycle Time
62
-
85
-
ns
37
t
RWD
RAS to WE Delay Time (Read-Modify-Write)
34
-
46
-
ns
11
38
t
CWD
CAS to WE Delay Time (Read-Modify-Write)
17
-
21
-
ns
11
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相关代理商/技术参数 |
参数描述 |
|---|---|
| A428316V | 制造商:AMICC 制造商全称:AMIC Technology 功能描述:256K X 16 CMOS DYNAMIC RAM WITH EDO PAGE MODE |
| A428316V-25 | 制造商:AMICC 制造商全称:AMIC Technology 功能描述:256K X 16 CMOS DYNAMIC RAM WITH EDO PAGE MODE |
| A428316V-25U | 制造商:AMICC 制造商全称:AMIC Technology 功能描述:256K X 16 CMOS DYNAMIC RAM WITH EDO PAGE MODE |
| A428316V-35 | 制造商:AMICC 制造商全称:AMIC Technology 功能描述:256K X 16 CMOS DYNAMIC RAM WITH EDO PAGE MODE |
| A428316V-35U | 制造商:AMICC 制造商全称:AMIC Technology 功能描述:256K X 16 CMOS DYNAMIC RAM WITH EDO PAGE MODE |
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