参数资料
型号: A42U0616SERIES
英文描述: 1M X 16 CMOS DYNAMIC RAM WITH EDO PAGE MODE
中文描述: 100万× 16的CMOS动态RAM与江户页面模式
文件页数: 2/25页
文件大小: 225K
代理商: A42U0616SERIES
Preliminary
A42U0616 Series
1M X 16 CMOS DYNAMIC RAM WITH EDO PAGE MODE
PRELIMINARY (June, 2001, Version 0.0)
1
AMIC Technology, Inc.
Features
n
Organization: 1,048,576 words X 16 bits
n
Part Identification
- A42U0616 (1K Ref.)
n
Single 2.5V power supply/built-in VBB generator
n
Low power consumption
- Operating: 120mA (-50 max)
-
Standby: 1mA (TTL), 0.2mA (CMOS),
250μA (Self-refresh current)
n
High speed
- 50/60/80 ns RAS access time
- 25/30/40 ns column address access time
-
13/15/20 ns CAS access time
-
20/25/35 ns EDO Page Mode Cycle Time
n
Separate CAS (
UCAS
,
LCAS
) for byte selection
n
Fast Page Mode with Extended Data Out
n
Read-modify-write, RAS -only, CAS -before- RAS ,
Hidden refresh capability
n
TTL-compatible, three-state I/O
n
JEDEC standard packages
-
400mil, 42-pin SOJ
-
400mil, 50/44 TSOP type II package
General Description
The A42U0616 is a new generation randomly accessed
memory for graphics, organized in a 1,048,576 -word by
16-bit configuration. This product can execute Write and
Read operation via CAS pin.
The A42U0616 offers an accelerated Fast Page Mode
cycle with a feature called Extended Data Out (EDO).
Pin Configuration
n
SOJ
n
TSOP
VCC
I/O
0
I/O
1
I/O
2
I/O
3
VCC
NC
NC
NC
A0
A1
A2
A3
A4
VSS
A5
A6
A7
A8
I/O
13
I/O
12
VSS
I/O
14
I/O
15
VSS
A
23
22
WE
RAS
NC
OE
A9
I/O
4
I/O
5
I/O
6
I/O
7
UCAS
LCAS
NC
I/O
8
I/O
9
I/O
10
I/O
11
20
21
19
18
12
13
14
15
16
17
11
10
9
8
7
6
5
4
3
2
1
24
25
26
27
28
29
30
31
32
33
34
35
36
37
38
39
40
41
42
VCC
I/O
0
I/O
1
I/O
2
I/O
3
VCC
NC
NC
A0
A1
A2
A3
A4
VSS
A5
A6
A7
A8
I/O
13
I/O
12
VSS
I/O
14
I/O
15
VSS
A
24
23
WE
RAS
NC
I/O
4
I/O
5
I/O
6
I/O
7
NC
NC
LCAS
UCAS
OE
A9
NC
I/O
8
I/O
9
I/O
10
I/O
11
21
22
20
19
13
14
15
16
17
18
12
10
11
9
8
7
6
5
4
3
2
1
25
26
27
28
29
30
31
32
33
35
34
36
37
38
39
40
41
42
43
44
VCC
VCC
NC
This allow random access of up to 1024(1K Ref.) words
within a row at a 50/40/28 MHz EDO cycle, making the
A42U0616 ideally suited for graphics, digital signal
processing and high performance computing systems.
Pin Descriptions
Symbol
Description
A0 - A9
Address Inputs (1K product)
I/O
0
- I/O
15
Data Input/Output
RAS
Row Address Strobe
LCAS
Column Address Strobe for Lower Byte
(I/O
0
– I/O
7
)
UCAS
Column Address Strobe for Upper Byte
(I/O
8
– I/O
15
)
WE
Write Enable
OE
Output Enable
VCC
2.5V Power Supply
VSS
Ground
NC
No Connection
相关PDF资料
PDF描述
A42U2604SERIES 4M X 4 CMOS DYNAMIC RAM WITH EDO PAGE MODE
A431AM Requlator -> Shunt(Adjustable Voltage)
A431BM Requlator -> Shunt(Adjustable Voltage)
A438S SCR / Diode Presspacks
A43L2616-PHSERIES 1M X 16 Bit X 4 Banks Synchronous DRAM
相关代理商/技术参数
参数描述
A42U0616V 制造商:AMICC 制造商全称:AMIC Technology 功能描述:1M X 16 CMOS DYNAMIC RAM WITH EDO PAGE MODE
A42U0616V-50 制造商:AMICC 制造商全称:AMIC Technology 功能描述:1M X 16 CMOS DYNAMIC RAM WITH EDO PAGE MODE
A42U0616V-60 制造商:AMICC 制造商全称:AMIC Technology 功能描述:1M X 16 CMOS DYNAMIC RAM WITH EDO PAGE MODE
A42U0616V-80 制造商:AMICC 制造商全称:AMIC Technology 功能描述:1M X 16 CMOS DYNAMIC RAM WITH EDO PAGE MODE
A42U2604 制造商:AMICC 制造商全称:AMIC Technology 功能描述:4M X 4 CMOS DYNAMIC RAM WITH EDO PAGE MODE