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参数资料
| 型号： | A42U0616SERIES |
| 英文描述： | 1M X 16 CMOS DYNAMIC RAM WITH EDO PAGE MODE |
| 中文描述： | 100万× 16的CMOS动态RAM与江户页面模式 |
| 文件页数： | 7/25页 |
| 文件大小： | 225K |
| 代理商： | A42U0616SERIES |
A42U0616 Series
PRELIMINARY (June, 2001, Version 0.0)
6
AMIC Technology, Inc.
AC Characteristics
(VCC = 2.5V
±
10%, VSS = 0V, Ta = 0
°
C to +70
°
C)
Test Conditions:
Input timing reference level: V
IH
/V
IL
=1.8V/0.8V
Output reference level: V
OH
/V
OL
=1.6V/0.8V
Output Load: 1TTL gate + CL (100pF)
Assumed t
T
=2ns
-50
-60
-80
#
Std
Symbol
Parameter
Min.
Max.
Min.
Max.
Min.
Max.
Unit
Notes
t
T
Transition Time (Rise and Fall)
1
50
1
50
1
50
ns
4, 5
t
REF
Refresh Period
-
16
-
16
-
16
ms
3
1
t
RC
Random Read or Write Cycle Time
84
-
104
-
134
-
ns
2
t
RP
RAS Precharge Time
30
-
40
-
50
-
ns
3
t
RAS
RAS Pulse Width
50
10K
60
10K
80
10K
ns
4
t
CAS
CAS Pulse Width
7
10K
10
10K
15
10K
ns
5
t
RCD
RAS to CAS Delay Time
11
37
14
45
20
60
ns
6
6
t
RAD
RAS to Column Address Delay Time
9
25
12
30
15
40
ns
7
7
t
RSH
CAS to RAS Hold Time
7
-
10
-
10
-
ns
8
t
CSH
CAS Hold Time
37
-
40
-
50
-
ns
9
t
CRP
CAS to RAS Precharge Time
5
-
5
-
5
-
ns
10
t
ASR
Row Address Setup Time
0
-
0
-
0
-
ns
11
t
RAH
Row Address Hold Time
7
-
10
-
10
-
ns
12
t
CLZ
CAS to Output in Low Z
0
-
0
-
0
-
ns
8
13
t
RAC
Access Time from RAS
-
50
-
60
-
80
ns
6,7
14
t
CAC
Access Time from CAS
-
13
-
15
-
20
ns
6, 12
15
t
AA
Access Time from Column Address
-
25
-
30
-
40
ns
7, 12
16
t
AR
Column Address Hold Time from RAS
44
-
55
-
70
-
ns
17
t
RCS
Read Command Setup Time
0
-
0
-
0
-
ns
18
t
RCH
Read Command Hold Time
0
-
0
-
0
-
ns
9
19
t
RRH
Read Command Hold Time Reference
to RAS
0
-
0
-
0
-
ns
9
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相关代理商/技术参数 |
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|---|---|
| A42U0616V | 制造商:AMICC 制造商全称:AMIC Technology 功能描述:1M X 16 CMOS DYNAMIC RAM WITH EDO PAGE MODE |
| A42U0616V-50 | 制造商:AMICC 制造商全称:AMIC Technology 功能描述:1M X 16 CMOS DYNAMIC RAM WITH EDO PAGE MODE |
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| A42U0616V-80 | 制造商:AMICC 制造商全称:AMIC Technology 功能描述:1M X 16 CMOS DYNAMIC RAM WITH EDO PAGE MODE |
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