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参数资料
| 型号： | A42U2604SERIES |
| 英文描述： | 4M X 4 CMOS DYNAMIC RAM WITH EDO PAGE MODE |
| 中文描述： | 4米× 4的CMOS动态RAM与江户页面模式 |
| 文件页数： | 3/25页 |
| 文件大小： | 413K |
| 代理商： | A42U2604SERIES |
A42U2604 Series
PRELIMINARY
(June, 2001, Version 0.0)
2
AMIC Technology, Inc.
Selection Guide
Symbol
Description
-50
-60
-80
Unit
t
RAC
Maximum
RAS
Access Time
50
60
80
ns
t
AA
Maximum Column Address Access Time
25
30
40
ns
t
CAC
Maximum
CAS
Access Time
13
15
20
ns
t
OEA
Maximum Output Enable (
OE
) Access Time
13
15
20
ns
t
RC
Minimum Read or Write Cycle Time
84
104
134
ns
t
PC
Minimum EDO Cycle Time
20
25
35
ns
Functional Description
The A42U2604 reads and writes data by multiplexing an
22-bit address into a 11-bit(2K) row and column address.
RAS
and
CAS
are used to strobe the row address and the
column address, respectively.
A Read cycle is performed by holding the
WE
signal high
during
RAS
/
CAS
operation. A Write cycle is executed by
holding the
WE
signal low during
RAS
/
CAS
operation;
the input data is latched by the falling edge of
WE
or
CAS
, whichever occurs later. The data inputs and outputs
are routed through 4 common I/O pins, with
RAS
,
CAS
,
WE
and
OE
controlling the in direction.
EDO Page Mode operation all 2048(2K) columns within a
selected row to be randomly accessed at a high data rate.
A EDO Page Mode cycle is initiated with a row address
latched by
RAS
followed by a column address latched by
CAS
. While holding
RAS
low,
CAS
can be toggled to
strobe changing column addresses, thus achieving shorter
cycle times.
The A42U2604 offers an accelerated Fast Page Mode
cycle through a feature called Extended Data Out, which
keeps the output drivers on during the
CAS
precharge
time (t
cp
). Since data can be output after
CAS
goes high,
the user is not required to wait for valid data to appear
before starting the next access cycle. Data-out will remain
valid as long as
RAS
and
OE
are low, and
WE
is high;
this is the only characteristic which differentiates Extended
Data Out operation from a standard Read or Fast Page
Read.
A memory cycle is terminated by returning both
RAS
and
CAS
high. Memory cell data will retain its correct state by
maintaining
power
and
combinations of the 11-bit(2K) row addresses, regardless
of sequence, at least once every 32ms through any
RAS
cycle (Read, Write) or
RAS
Refresh cycle (
RAS
-only,
CBR, or Hidden). The CBR Refresh cycle automatically
controls the row addresses by invoking the refresh counter
and controller.
Power-On
The initial application of the VCC supply requires a 200 μs
wait followed by a minimum of any eight initialization
cycles containing a
RAS
clock. During Power-On, the
VCC current is dependent on the input levels of
RAS
and
CAS
. It is recommended that
RAS
and
CAS
track with
VCC or be held at a valid V
IH
during Power-On to avoid
current surges.
accessing
all
2048(2K)
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相关代理商/技术参数 |
参数描述 |
|---|---|
| A42U2604V | 制造商:AMICC 制造商全称:AMIC Technology 功能描述:4M X 4 CMOS DYNAMIC RAM WITH EDO PAGE MODE |
| A42U2604V-50 | 制造商:AMICC 制造商全称:AMIC Technology 功能描述:4M X 4 CMOS DYNAMIC RAM WITH EDO PAGE MODE |
| A42U2604V-50U | 制造商:AMICC 制造商全称:AMIC Technology 功能描述:4M X 4 CMOS DYNAMIC RAM WITH EDO PAGE MODE |
| A42U2604V-60 | 制造商:AMICC 制造商全称:AMIC Technology 功能描述:4M X 4 CMOS DYNAMIC RAM WITH EDO PAGE MODE |
| A42U2604V-60U | 制造商:AMICC 制造商全称:AMIC Technology 功能描述:4M X 4 CMOS DYNAMIC RAM WITH EDO PAGE MODE |
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