- 您现在的位置：买卖IC网 > PDF目录92888 > AA026P1-00 25000 MHz - 29000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER PDF资料下载
参数资料
| 型号： | AA026P1-00 |
| 元件分类： | 放大器 |
| 英文描述： | 25000 MHz - 29000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
| 文件页数： | 1/2页 |
| 文件大小： | 98K |
| 代理商： | AA026P1-00 |
Alpha Industries, Inc. [781] 935-5150
Fax [617] 824-4579 Email sales@alphaind.com www.alphaind.com
1
Specifications subject to change without notice. 12/99A
25–29 GHz GaAs MMIC
Driver Amplifier
Features
I Single Bias Supply Operation (6 V)
I 17 dB Typical Small Signal Gain
I 16 dBm Typical P1 dB Output Power
at 26.5 GHz
I 0.25 m Ti/Pd/Au Gates
I 100% On-Wafer RF and DC Testing
I 100% Visual Inspection to MIL-STD-883
MT 2010
Chip Outline
AA026P1-00
Description
Alpha’s three-stage reactively-matched 25–29 GHz
GaAs MMIC driver amplifier has typical small signal gain
of 17 dB with a typical P1 dB of 16 dBm at 26.5 GHz.
The chip uses Alpha’s proven 0.25
m MESFET
technology, and is based upon MBE layers and electron
beam lithography for the highest uniformity and
repeatability. The FETs employ surface passivation to
ensure a rugged, reliable part with through-substrate via
holes and gold-based backside metallization to facilitate
a conductive epoxy die attach process. All chips are
screened for gain, output power and S-parameters
prior to shipment for guaranteed performance.
Parameter
Condition
Symbol
Min.
Typ.2
Max.
Unit
Drain Current
IDS
120
170
mA
Small Signal Gain
F = 25–29 GHz
G
14
17
dB
Input Return Loss
F = 25–29 GHz
RLI
-8
-6
dB
Output Return Loss
F = 25–29 GHz
RLO
-10
-6
dB
Output Power at 1 dB Gain Compression
F = 26.5 GHz
P1 dB
14
16
dBm
Saturated Output Power
F = 26.5 GHz
PSAT
15
17
dBm
Thermal Resistance1
ΘJC
132
°C/W
Electrical Specifications at 25°C (VDS = 6 V)
0.000
0.853
0.561
1.418
1.647
2.120
2.582
3.200
0.112
0.194
1.760
Dimensions indicated in mm.
All DC (V) pads are 0.1 x 0.1 mm and RF In, Out pads are 0.07 mm wide.
Chip thickness = 0.1 mm.
Characteristic
Value
Operating Temperature (TC)
-55°C to +90°C
Storage Temperature (TST)
-65°C to +150°C
Bias Voltage (VD)7 VDC
Power In (PIN)
16 dBm
Junction Temperature (TJ)
175°C
Absolute Maximum Ratings
1. Calculated value based on measurement of discrete FET.
2. Typical represents the median parameter value across the specified
frequency range for the median chip.
相关PDF资料 |
PDF描述 |
|---|---|
| AA026P2-A4 | 23500 MHz - 26500 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER |
| AA028N1-00 | 24000 MHz - 30000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
| AA028N1-99 | 23000 MHz - 30000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
| AA028P1-00 | 27000 MHz - 29000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER |
| AA028P2-00 | 27000 MHz - 31000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
相关代理商/技术参数 |
参数描述 |
|---|---|
| AA026P2-00 | 制造商:ALPHA 制造商全称:ALPHA 功能描述:23.5-26.5 GHz GaAs MMIC Power Amplifier |
| AA026P2-A4 | 制造商:ALPHA 制造商全称:ALPHA 功能描述:23.5-26.5 GHz Surface Mount Medium Power Amplifier |
| AA-027-12-22-00-00 | 功能描述:热电组件 28.5W 3.1A 107X84mm RoHS:否 类型:Air to Air Assembly 制冷功率:58 W 最大电流:6.2 A 最大电压:12 V 制造商:Laird Technologies / Thermal Solutions |
| AA028N1-00 | 制造商:ALPHA 制造商全称:ALPHA 功能描述:24-30 GHz GaAs MMIC Low Noise Amplifier |
| AA028N1-99 | 制造商:ALPHA 制造商全称:ALPHA 功能描述:23-30 GHz Low Noise Amplifier |
发布紧急采购，3分钟左右您将得到回复。