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参数资料
| 型号： | AD2S81AJD |
| 厂商： | Analog Devices Inc |
| 文件页数： | 15/20页 |
| 文件大小： | 0K |
| 描述： | IC R/D CONV TRACKING 28CDIP |
| 标准包装： | 1 |
| 类型： | R/D 转换器 |
| 输入类型： | 并联 |
| 输出类型： | 数字 |
| 接口： | 并联 |
| 电流 - 电源： | 30mA |
| 安装类型： | 通孔 |
| 封装/外壳： | 28-CDIP（0.605"，15.37mm） |
| 供应商设备封装： | 28-CDIP |
| 包装： | 管件 |
AD2S80A–SPECIFICATIONS
Parameter
Conditions
Min
Typ
Max
Unit
RATIO MULTIPLIER
AC Error Output Scaling
10 Bit
177.6
mV/Bit
12 Bit
44.4
mV/Bit
14 Bit
11.1
mV/Bit
16 Bit
2.775
mV/Bit
PHASE SENSITIVE DETECTOR
Output Offset Voltage
12
mV
Gain
In Phase
w.r.t. REF
–0.882
–0.9
–0.918
V rms/V dc
In Quadrature
w.r.t. REF
±0.02
V rms/V dc
Input Bias Current
60
150
nA
Input Impedance
1
M
Input Voltage
±8V
INTEGRATOR
Open-Loop Gain
At 10 kHz
57
63
dB
Dead Zone Current (Hysteresis)
100
nA/LSB
Input Offset Voltage
15
mV
Input Bias Current
60
150
nA
Output Voltage Range
±V
S =
±10.8 V dc
±7V
VCO
Maximum Rate
±V
S =
±12 V dc
1.1
MHz
VCO Rate
Positive Direction
7.1
7.9
8.7
kHz/
A
Negative Direction
7.1
7.9
8.7
kHz/
A
VCO Power Supply Sensitivity
Increase
+VS
+0.5
%/V
–VS
–8.0
%/V
Decrease
+VS
–8.0
%/V
–VS
+2.0
%/V
Input Offset Voltage
15
mV
Input Bias Current
70
380
nA
Input Bias Current Tempco
–1.22
nA/
°C
Input Voltage Range
±8V
Linearity of Absolute Rate
Full Range
<2
% FSD
Over 0% to 50% of Full Range
<1
% FSD
Reversion Error
1.5
% FSD
Sensitivity of Reversion Error
±8
%/V of
to Symmetry of Power Supplies
Asymmetry
POWER SUPPLIES
Voltage Levels
+VS
+10.8
+13.2
V
–VS
–10.8
–13.2
V
+VL
+5
+13.2
V
Current
±I
S
±V
S @
±12 V
12
23
mA
±I
S
±V
S @ 13.2 V
19
30
mA
±I
L
+VL @
±5.0 V
0.5
1.5
mA
Specification subject to change without notice.
All min and max specifications are guaranteed. Specifications in boldface are tested on all production units at final electrical test.
(typical at 25 C unless otherwise noted)
–4–
REV. B
CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily
accumulate on the human body and test equipment and can discharge without detection. Although
the AD2S80A features proprietary ESD protection circuitry, permanent damage may occur on
devices subjected to high-energy electrostatic discharges. Therefore, proper ESD precautions are
recommended to avoid performance degradation or loss of functionality.
WARNING!
ESD SENSITIVE DEVICE
C
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