参数资料
型号: AD5227BUJZ10-RL7
厂商: Analog Devices Inc
文件页数: 10/16页
文件大小: 0K
描述: IC DGTL POT UP/DN 10K TSOT23-8
标准包装: 1
接片: 64
电阻(欧姆): 10k
电路数: 1
温度系数: 标准值 35 ppm/°C
存储器类型: 易失
接口: 3 线串行(芯片选择,增/减)
电源电压: 2.7 V ~ 5.5 V
工作温度: -40°C ~ 105°C
安装类型: 表面贴装
封装/外壳: SOT-23-8 薄型,TSOT-23-8
供应商设备封装: TSOT-23-8
包装: 标准包装
产品目录页面: 786 (CN2011-ZH PDF)
其它名称: AD5227BUJZ10RL7DKR
AD5227
Rev. B | Page 3 of
16
ELECTRICAL CHARACTERISTICS
10 kΩ, 50 kΩ, 100 kΩ versions: VDD = 3 V ± 10% or 5 V ± 10%, VA = VDD, VB = 0 V, 40°C < TA < +105°C, unless otherwise noted.
Table 2.
Parameter
Symbol
Conditions
Min
Max
Unit
DC CHARACTERISTICS RHEOSTAT MODE
Resistor Differential Nonlinearity2
R-DNL
RWB, A = no connect
0.5
±0.15
+0.5
LSB
Resistor Integral Nonlinearity2
R-INL
RWB, A = no connect
1
±0.3
+1
LSB
Nominal Resistor Tolerance3
RAB/RAB
20
+20
%
Resistance Temperature Coefficient
(RAB/RAB)/T × 106
35
ppm/°C
Wiper Resistance
RW
VDD = 2.7 V
100
250
Ω
VDD = 2.8 V to 5.5 V
50
200
Ω
DC CHARACTERISTICS POTENTIOMETER DIVIDER MODE
Resolution
N
6
Bits
Integral Nonlinearity3
INL
1
±0.1
+1
LSB
Differential Nonlinearity3, 4
DNL
0.5
±0.1
+0.5
LSB
Voltage Divider Temperature Coefficient
(VW/VW)/T × 106
Midscale
5
ppm/°C
Full-Scale Error
VWFSE
≥+31 steps from midscale
1.2
0.5
0
LSB
40°C < TA < +60°C,
VDD = 2.8 V to 5.5 V
1
0.5
0
LSB
Zero-Scale Error
VWZSE
≤32 steps from midscale
0
0.5
1.2
LSB
40°C < TA < +60°C,
VDD = 2.8 V to 5.5 V
0
0.5
1
LSB
RESISTOR TERMINALS
Voltage Range5
VA, B, W
With respect to GND
0
VDD
V
CA, B
f = 1 MHz, measured to
GND
140
pF
Capacitance W6
CW
f = 1 MHz, measured to
GND
150
pF
Common-Mode Leakage
ICM
VA = VB = VW
1
nA
DIGITAL INPUTS (CS, CLK, U/D)
Input Logic High
VIH
2.4
5.5
V
Input Logic Low
VIL
0
0.8
V
Input Current
II
VIN = 0 V or 5 V
±1
μA
CI
5
pF
POWER SUPPLIES
Power Supply Range
VDD
2.7
5.5
V
Supply Current
IDD
VIH = 5 V or VIL = 0 V,
VDD = 5 V
0.4
3
μA
Power Dissipation7
PDISS
VIH = 5 V or VIL = 0 V,
VDD = 5 V
17
μW
Power Supply Sensitivity
PSSR
VDD = 5 V ± 10%
0.01
0.05
%/%
DYNAMIC CHARACTERISTICS6, 8, 9
Bandwidth 3 dB
BW_10 k
RAB = 10 kΩ, midscale
460
kHz
BW_50 k
RAB = 50 kΩ, midscale
100
kHz
BW_100 k
RAB = 100 kΩ, midscale
50
kHz
Total Harmonic Distortion
THD
VA = 1 V rms, RAB = 10 kΩ,
VB = 0 V dc, f = 1 kHz
0.05
%
Adjustment Settling Time
tS
VA = 5 V ± 1 LSB error
band, VB = 0, measured at
VW
1
μs
Resistor Noise Voltage
eN_WB
RWB = 5 kΩ, f = 1 kHz
14
nV/√Hz
Footnotes on the next page.
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