参数资料
型号: AD5227BUJZ10-RL7
厂商: Analog Devices Inc
文件页数: 12/16页
文件大小: 0K
描述: IC DGTL POT UP/DN 10K TSOT23-8
标准包装: 1
接片: 64
电阻(欧姆): 10k
电路数: 1
温度系数: 标准值 35 ppm/°C
存储器类型: 易失
接口: 3 线串行(芯片选择,增/减)
电源电压: 2.7 V ~ 5.5 V
工作温度: -40°C ~ 105°C
安装类型: 表面贴装
封装/外壳: SOT-23-8 薄型,TSOT-23-8
供应商设备封装: TSOT-23-8
包装: 标准包装
产品目录页面: 786 (CN2011-ZH PDF)
其它名称: AD5227BUJZ10RL7DKR
AD5227
Rev. B | Page 5 of
16
ABSOLUTE MAXIMUM RATINGS
Table 3.
Parameter
Rating
VDD to GND
0.3 V, +7 V
VA, VB, VW to GND
0 V, VDD
Digital Input Voltage to GND (CS, CLK, U/D)
0 V, VDD
Maximum Current
IWB, IWA Pulsed
±20 mA
IWB Continuous (RWB ≤ 5 kΩ, A open)1
±1 mA
IWA Continuous (RWA ≤ 5 kΩ, B open)1
±1 mA
IAB Continuous
(RAB = 10 kΩ/50 kΩ/100 kΩ)1
±500 μA/
±100 μA/±50 μA
Operating Temperature Range
40°C to +105°C
Maximum Junction Temperature (TJmax)
150°C
Storage Temperature
65°C to +150°C
Lead Temperature (Soldering, 10 s – 30 s)
245°C
Thermal Resistance2 θJA
230°C/W
1 Maximum terminal current is bounded by the maximum applied voltage
across any two of the A, B, and W terminals at a given resistance, the
maximum current handling of the switches, and the maximum power
dissipation of the package. VDD = 5 V.
2 Package power dissipation = (TJmax – TA) / θJA.
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only and functional operation of the device at these or
any other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
ESD CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on
the human body and test equipment and can discharge without detection. Although this product features
proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy
electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance
degradation or loss of functionality.
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