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参数资料
| 型号： | AD648KR |
| 厂商： | ANALOG DEVICES INC |
| 元件分类： | 运动控制电子 |
| 英文描述： | Dual Precision, Low Power BiFET Op Amp |
| 中文描述： | DUAL OP-AMP, 1500 uV OFFSET-MAX, 1 MHz BAND WIDTH, PDSO8 |
| 封装： | PLASTIC, SOIC-8 |
| 文件页数： | 2/12页 |
| 文件大小： | 335K |
| 代理商： | AD648KR |
AD648–SPECIFICATIONS
(@ + 25
8
C and V
S
=
6
15 V dc, unless otherwse noted)
–2–
REV. C
Model
AD648J/A/S
Min
AD648K/B/T
Min
AD648C
T yp
T yp
Max
T yp
Max
Min
Max
Units
INPUT OFFSET VOLT AGE
1
Initial Offset
T
to T
vs. T emperature
vs. Supply
vs. Supply, T
to T
Long-T erm Offset Stability
INPUT BIAS CURRENT
Either Input,
V
CM
= 0
Either Input
2
at T
, V
= 0
Max Input Bias Current Over
Common-Mode Voltage Range
Offset Current, V
CM
= 0
Offset Current at T
MAX
MAT CHING CHARACT ERIST ICS
3
Input Offset Voltage
Input Offset Voltage T
to T
Input Offset Voltage vs. T emperature
Input Bias Current
Crosstalk
INPUT IMPEDANCE
Differential
Common Mode
INPUT VOLT AGE RANGE
Differential
4
Common Mode
Common-Mode Rejection
V
CM
=
±
10 V
T
MIN
to T
MAX
V
CM
±
11 V
T
MIN
to T
MAX
INPUT VOLT AGE NOISE
Voltage 0.1 Hz to 10 Hz
f = 10 Hz
f = 100 Hz
f = 1 kHz
f = 10 kHz
INPUT CURRENT NOISE
f = 1 kHz
FREQUENCY RESPONSE
Unity Gain, Small Signal
Full Power Response
Slew Rate, Unity Gain
Settling T ime to
±
0.01%
OPEN-LOOP GAIN
V
O
=
±
10 V, R
L
≥
10 k
T
MIN
to T
, R
L
≥
10 k
V
O
=
±
10 V, R
L
≥
5 k
T
MIN
to T
MAX
, R
L
≥
5 k
OUT PUT CHARACT ERIST ICS
Voltage @ R
L
≥
10 k
,
T
to T
MAX
Voltage @ R
L
≥
5 k
,
T
to T
Short Circuit Current
POWER SUPPLY
Rated Performance
Operating Range
Quiescent Current (Both Amplifiers)
T EMPERAT URE RANGE
Operating, Rated Performance
Commercial (0
°
C to +70
°
C)
Industrial (–40
°
C to +85
°
C)
Military (–55
°
C to +125
°
C)
PACK AGE OPT IONS
SOIC (R-8)
Plastic (N-8)
Cerdip (Q-8)
Metal Can (H-08A)
T ape and Reel
Chips Available
0.75
2.0
3.0/3.0/3.0
20
0.3
1.0
1.5/1.5/2.0
10
0.10
0.3
0.5
3.0
mV
mV
μ
V/
°
C
dB
dB
μ
V/month
80
76/76/76
86
80
86
80
15
15
15
5
20
0.45/1.3/20
3
10
0.25/0.65/10
3
10
0.65
pA
nA
30
10
0.25/0.7/10
15
5
0.15/0.35/5
15
5
0.35
pA
pA
nA
5
2
2
1.0
2.0
3.0/3.0/3.0
0.5
1.0
1.5/1.5/2.0
0.2
0.4
0.5
mV
mV
μ
V/
°
C
pA
dB
8
5
2.5
10
5
5
–120
–120
–120
1
×
10
1 2
i
3
3
×
10
12
i
3
1
×
10
12
i
3
3
×
10
12
i
3
1
×
10
12
i
3
3
×
10
12
i
3
i
pF
i
pF
±
20
±
12
±
20
±
12
±
20
±
12
V
V
±
11
±
11
±
11
76
76/76/76
70
70/70/70
82
82
76
76
86
86
76
76
dB
dB
dB
dB
2
80
40
30
30
2
80
40
30
30
2
80
40
30
30
4.0
μ
V p-p
nV/
√
Hz
nV/
√
Hz
nV/
√
Hz
nV/
√
Hz
1.8
1.8
1.8
fA/
√
Hz
0.8
1.0
30
1.8
8
0.8
1.0
30
1.8
8
0.8
1.0
30
1.8
8
MHz
kHz
V/
μ
s
μ
s
1.0
1.0
1.0
300
300/300/300
150
150/150/150
1000
700
500
300
300
300
150
150
1000
700
500
300
300
300
150
150
1000
700
500
300
V/mV
V/mV
V/mV
V/mV
±
12/
±
12/
±
12
±
13
±
12
±
13
±
12
±
13
V
±
11/
±
11/
±
11
±
12
15
±
11
±
12
15
±
11
±
12
15
V
mA
±
15
±
15
±
15
V
V
μ
A
±
4.5
±
18
400
±
4.5
±
18
400
±
4.5
±
18
400
340
340
340
AD648J
AD648A
AD648S
AD648K
AD648B
AD648T
AD648C
AD648JR
AD648JN
AD648K R
AD648K N
AD648AQ, AD648SQ, AD648SQ/883B AD648BQ, AD648T Q/883B
AD648AH
AD648JR-REEL, AD648JR-REEL7
AD648JChips, AD648SChips
AD648CQ
AD648BH, AD648T H/883B
AD648K R-REEL, AD648K R-REEL7
相关PDF资料 |
PDF描述 |
|---|---|
| AD648S | Dual Precision, Low Power BiFET Op Amp |
| AD648SQ | Dual Precision, Low Power BiFET Op Amp |
| AD648T | Dual Precision, Low Power BiFET Op Amp |
| AD648SCHIPS | Dual Precision, Low Power BiFET Op Amp |
| AD648JCHIPS | Dual Precision, Low Power BiFET Op Amp |
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