参数资料
型号: AD8054
厂商: Analog Devices, Inc.
英文描述: Low Cost, High Speed Rail-to-Rail Amplifiers(低成本,高速满幅度四放大器)
中文描述: 低成本,高速轨到轨放大器(低成本,高速满幅度四放大器)
文件页数: 5/16页
文件大小: 256K
代理商: AD8054
–5–
AD8051/AD8052/AD8054
REV. 0
ABSOLUT E MAX IMUM RAT INGS
1
Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12.6 V
Internal Power Dissipation
2
Small OutlinePackage (R) . . . Observe Power Derating Curves
SOT -23-5 Package . . . . . . . . Observe Power Derating Curves
microSOIC Package . . . . . . . Observe Power Derating Curves
T SSOP-14 Package . . . . . . . Observe Power Derating Curves
Input Voltage (Common Mode) . . . . . . . . . . . . . . . . . . . .
±
V
S
Differential Input Voltage . . . . . . . . . . . . . . . . . . . . . . .
±
2.5 V
Output Short Circuit Duration
. . . . . . . . . . . . . . . . . . . . . . Observe Power Derating Curves
Storage T emperature Range R . . . . . . . . . . . –65
°
C to +125
°
C
Operating T emperature Range (A Grade) . . . –40
°
C to +85
°
C
Lead T emperature Range (Soldering 10 sec) . . . . . . . . +300
°
C
NOT ES
1
Stresses above those listed under Absolute Maximum Ratings may cause perma-
nent damage to the device. T his is a stress rating only; functional operation of the
device at these or any other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.
2
Specification is for device in free air:
8-Lead SOIC:
θ
JA
= 160
°
C/Watt
5-Lead SOT -23-5:
θ
JA
= 240
°
C/Watt
8-Lead microSOIC:
θ
JA
= 200
°
C/Watt
14-Lead SOIC:
θ
JA
= 120
°
C/Watt
14-Lead T SSOP:
θ
JA
= 180
°
C/Watt
ORDE RING GUIDE
T emperature
Range
Package
Description
Package
Options*
Model
AD8051AR
AD8051ART
AD8052AR
AD8052ARM
AD8054AR
AD8054ARU
–40
°
C to +85
°
C
–40
°
C to +85
°
C
–40
°
C to +85
°
C
–40
°
C to +85
°
C
–40
°
C to +85
°
C
–40
°
C to +85
°
C
8-Lead SOIC
5-Lead SOT -23-5
8-Lead SOIC
8-Lead microSOIC
14-Lead SOIC
14-Lead microSOIC RU-14
R-8
RT -5
R-8
RM-08
R-14
*R = Small Outline; RM = Micro Small Outline; RT = Surface Mount; RU =
T SSOP .
MAX IMUM POWE R DISSIPAT ION
T he maximum power that can be safely dissipated by the AD8051/
AD8052/AD8054 is limited by the associated rise in junction
temperature. T he maximum safe junction temperature for
plastic encapsulated devices is determined by the glass transi-
tion temperature of the plastic, approximately +150
°
C. T empo-
rarily exceeding this limit may cause a shift in parametric
performance due to a change in the stresses exerted on the die by
the package. Exceeding a junction temperature of +175
°
C for an
extended period can result in device failure.
While the AD8051/AD8052/AD8054 are internally short circuit
protected, this may not be sufficient to guarantee that the maxi-
mum junction temperature (+150
°
C) is not exceeded under
all conditions. T o ensure proper operation, it is necessary to ob-
serve the maximum power derating curves.
AMBIENT TEMPERATURE –
8
C
–50
0
T
J
= +150
8
C
2.0
1.5
1.0
0.5
8-LEAD SOIC
PACKAGE
–40 –30 –20 –10
0
10
20
30
40
50
60
70 80
90
microSOIC
SOT-23-5
14-LEAD SOIC
M
14-LEAD TSSOP-14
Figure 2. Plot of Maximum Power Dissipation vs.
Temperature for AD8051/AD8052/AD8054
CAUT ION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily
accumulate on the human body and test equipment and can discharge without detection.
Although the AD8051/AD8052/AD8054 feature proprietary ESD protection circuitry, perma-
nent damage may occur on devices subjected to high energy electrostatic discharges. T herefore, proper
ESD precautions are recommended to avoid performance degradation or loss of functionality.
WARNNG
ESD SENSITIVE DEVICE
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