参数资料
型号: AD8131ARZ
厂商: Analog Devices Inc
文件页数: 20/21页
文件大小: 0K
描述: IC AMP DIFF LDIST 60MA 8SOIC
标准包装: 98
放大器类型: 差分
电路数: 1
输出类型: 差分
转换速率: 2000 V/µs
-3db带宽: 400MHz
电流 - 输入偏压: 500nA
电压 - 输入偏移: 1500µV
电流 - 电源: 11.5mA
电流 - 输出 / 通道: 60mA
电压 - 电源,单路/双路(±): 2.8 V ~ 11 V,±1.4 V ~ 5.5 V
工作温度: -40°C ~ 125°C
安装类型: 表面贴装
封装/外壳: 8-SOIC(0.154",3.90mm 宽)
供应商设备封装: 8-SO
包装: 管件
产品目录页面: 765 (CN2011-ZH PDF)
AD8131
Rev. B | Page 7 of 20
ABSOLUTE MAXIMUM RATINGS
Table 5.1
Parameter
Rating
Supply Voltage
±5.5 V
VOCM
±VS
Internal Power Dissipation
250 mW
Operating Temperature Range
40°C to +125°C
Storage Temperature Range
65°C to +150°C
Lead Temperature (Soldering 10 sec)
300°C
1 Thermal resistance measured on SEMI standard 4-layer board.
8-lead SOIC: θJA = 121°C/W.
8-lead MSOP: θJA = 142°C/W.
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only, functional operation of the device at these or any
other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
AMBIENT TEMPERATURE (
°C)
–50
0
TJ = 150°C
2.0
1.5
1.0
M
A
XIM
U
M
POW
E
R
D
ISSIPA
TION
(
W
)
8-LEAD SOIC
PACKAGE
–20
10
100
130
8-LEAD
MSOP
PACKAGE
0.5
40
70
01072-044
Figure 3. Plot of Maximum Power Dissipation vs. Temperature
ESD CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on
the human body and test equipment and can discharge without detection. Although this product features
proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy
electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance
degradation or loss of functionality.
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