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参数资料
| 型号： | AD823AARZ-RL |
| 厂商： | Analog Devices Inc |
| 文件页数： | 9/20页 |
| 文件大小： | 0K |
| 描述： | IC OPAMP FET RR 17MHZ DUAL 8SOIC |
| 标准包装： | 2,500 |
| 放大器类型： | J-FET |
| 电路数： | 2 |
| 输出类型： | 满摆幅 |
| 转换速率： | 35 V/µs |
| -3db带宽： | 19MHz |
| 电流 - 输入偏压： | 1.3pA |
| 电压 - 输入偏移： | 700µV |
| 电流 - 电源： | 6.3mA |
| 电流 - 输出 / 通道： | 44mA |
| 电压 - 电源，单路/双路(±)： | 3 V ~ 36 V，±1.5 V ~ 18 V |
| 工作温度： | -40°C ~ 85°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SO |
| 包装： | 带卷 (TR) |
Data Sheet
AD823A
Rev. | Page 17 of 20
log f
fp
G = 1
G = R2C1s
fx
fu
OPEN-LOOP GAIN
(A) WITHOUT COMPENSATION
f
fp
G = 1
f
fx
fu
G = 1 + CS/CF
fz
fn
(B) WITH COMPENSATION
I TO V GAIN
PH
A
SE
(°
)
|A|
(
d
B)
|A
(
s)
|
–180°
–135°
–90°
–45°
0°
–135°
–90°
–45°
0°
45°
90°
G = RFCS(s)
09439-
400
Figure 43. Gain and Phase Plot of the Transimpedance Amplifier Design
The dominant sources of output noise in the wideband
photodiode preamp design are the input voltage noise of the
amplifier, VNOISE and the resistor noise due to RF. The gray curve
in Figure 43 shows the noise gain over frequencies for the
photodiode preamp. The noise bandwidth is at the frequency fN,
and it can be calculated by
(
)
F
S
u
N
C
f
+
=
(6)
Figure 44 shows the AD823A configured as a transimpedance
photodiode amplifier. The amplifier is used in conjunction with
a photodiode detector with input capacitance of 5 pF. Figure 45
shows the transimpedance response of the AD823A when IPHOTO
is 1 A p-p. The amplifier has a bandwidth of 2.2 MHz when it
is maximized for a 45° phase margin with CF = 1.2 pF. Note that
with the PCB parasitics added to CF, the peaking is only 0.5 dB
and the bandwidth is slightly reduced. Increasing CF to 2.7 pF
completely eliminates the peaking. However, it reduces the
bandwidth to 1.2 MHz.
Table 8 shows the noise sources and total output noise for the
photodiode preamp, where the preamplifier is configured to
have a 45° phase margin for maximal bandwidth and fz = fx = fn
in this case.
AD823A
0.1F
+5V
49.9k
VOUT
0.1F
–5V
100
1.2pF
09439-
050
Figure 44. Photodiode Preamplifier
95
85
86
87
88
89
90
91
92
93
94
1k
10k
100k
1M
10M
T
RANS
IM
P
E
DANCE
G
AI
N
(
d
B)
FREQUENCY (Hz)
09439-
144
IPHOTO = 1A p-p
CF = 1.2pF
IPHOTO = 1A p-p
CF = 2.7pF
Figure 45. Photodiode Preamplifier Frequency Response
B
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相关代理商/技术参数 |
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|---|---|
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| AD823ANZ | 功能描述:IC OPAMP JFET R-R DUAL LN 8DIP RoHS:是 类别:集成电路 (IC) >> Linear - Amplifiers - Instrumentation 系列:- 标准包装:2,500 系列:- 放大器类型:通用 电路数:4 输出类型:- 转换速率:0.6 V/µs 增益带宽积:1MHz -3db带宽:- 电流 - 输入偏压:45nA 电压 - 输入偏移:2000µV 电流 - 电源:1.4mA 电流 - 输出 / 通道:40mA 电压 - 电源，单路/双路(±):3 V ~ 32 V，±1.5 V ~ 16 V 工作温度:0°C ~ 70°C 安装类型:表面贴装 封装/外壳:14-TSSOP（0.173"，4.40mm 宽） 供应商设备封装:14-TSSOP 包装:带卷 (TR) 其它名称:LM324ADTBR2G-NDLM324ADTBR2GOSTR |
| AD823ANZ | 制造商:Analog Devices 功能描述:Operational Amplifier (Op-Amp) IC 制造商:Analog Devices 功能描述:IC, OP-AMP, 16MHZ, 25V/s, 0.8mV, DIP-8 |
| AD823AR | 功能描述:IC OPAMP JFET R-R DUAL LN 8SOIC RoHS:否 类别:集成电路 (IC) >> Linear - Amplifiers - Instrumentation 系列:- 标准包装:150 系列:- 放大器类型:音频 电路数:2 输出类型:- 转换速率:5 V/µs 增益带宽积:12MHz -3db带宽:- 电流 - 输入偏压:100nA 电压 - 输入偏移:500µV 电流 - 电源:6mA 电流 - 输出 / 通道:50mA 电压 - 电源，单路/双路(±):4 V ~ 32 V，±2 V ~ 16 V 工作温度:-40°C ~ 85°C 安装类型:表面贴装 封装/外壳:8-TSSOP（0.173"，4.40mm 宽） 供应商设备封装:8-TSSOP 包装:管件 |
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