参数资料
型号: AD8652ARMZ
厂商: Analog Devices Inc
文件页数: 15/20页
文件大小: 0K
描述: IC OPAMP VF CMOS 50MHZ LN 8MSOP
标准包装: 50
系列: DigiTrim®
放大器类型: 电压反馈
电路数: 2
输出类型: 满摆幅
转换速率: 41 V/µs
增益带宽积: 50MHz
电流 - 输入偏压: 1pA
电压 - 输入偏移: 90µV
电流 - 电源: 17.5mA
电流 - 输出 / 通道: 40mA
电压 - 电源,单路/双路(±): 2.7 V ~ 5.5 V,±1.35 V ~ 2.75 V
工作温度: -40°C ~ 125°C
安装类型: 表面贴装
封装/外壳: 8-TSSOP,8-MSOP(0.118",3.00mm 宽)
供应商设备封装: 8-MSOP
包装: 管件
AD8651/AD8652
Data Sheet
Rev. D | Page 4 of 20
V+ = 5 V, V= 0 V, VCM = V+/2, TA = 25°C, unless otherwise specified.
Table 2.
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
INPUT CHARACTERISTICS
Offset Voltage
VOS
0 V ≤ VCM ≤ 5 V
100
350
μV
–40°C ≤ TA ≤ +85°C, 0 V ≤ VCM ≤ 5 V
1.4
mV
–40°C ≤ TA ≤ +125°C, 0 V ≤ VCM ≤ 5 V
1.7
mV
0 V ≤ VCM ≤ 5 V
90
300
μV
–40°C ≤ TA ≤ +125°C, 0 V ≤ VCM ≤ 5 V
0.4
1.4
mV
Offset Voltage Drift
TCVOS
4
μV/°C
Input Bias Current
IB
1
10
pA
–40°C ≤ TA ≤ +85°C
30
pA
–40°C ≤ TA ≤ +125°C
600
pA
Input Offset Current
IOS
1
10
pA
–40°C ≤ TA ≤ +85°C
30
pA
–40°C ≤ TA ≤ +125°C
600
pA
Input Voltage Range
VCM
–0.1
+5.1
V
Common-Mode Rejection Ratio
CMRR
0.1 V < VCM < 5.1 V
80
95
dB
–40°C ≤ TA ≤ +85°C, 0.1 V < VCM < 5.1 V
75
94
dB
–40°C ≤ TA ≤ +125°C, 0.1 V < VCM < 5.1 V
70
90
dB
0.1 V < VCM < 5.1 V
84
100
dB
–40°C ≤ TA ≤ +125°C, 0.1 V < VCM < 5.1 V
76
95
dB
Large Signal Voltage Gain
AVO
RL = 1 k, 200 mV < VO < 4.8 V
100
115
dB
RL = 1 k, 200 mV < VO < 4.8 V, TA = 85°C
98
114
dB
RL = 1 k, 200 mV < VO < 4.8 V, TA = 125°C
95
111
dB
OUTPUT CHARACTERISTICS
Output Voltage High
VOH
IL = 250 A, –40°C ≤ TA ≤ +125°C
4.97
V
Output Voltage Low
VOL
IL = 250 A, –40°C ≤ TA ≤ +125°C
30
mV
Short-Circuit Limit
ISC
Sourcing
80
mA
Sinking
80
mA
Output Current
IO
40
mA
POWER SUPPLY
Power Supply Rejection Ratio
PSRR
VS = 2.7 V to 5.5 V, VCM = 0 V
76
94
dB
–40°C ≤ TA ≤ +125°C
74
93
dB
Supply Current
ISY
IO = 0
9.5
14.0
mA
–40°C ≤ TA ≤ +125°C
15
mA
IO = 0
17.5
20.0
mA
–40°C ≤ TA ≤ +125°C
23.5
mA
INPUT CAPACITANCE
CIN
Differential
6
pF
Common Mode
9
pF
DYNAMIC PERFORMANCE
Slew Rate
SR
G = 1, RL = 10 k
41
V/s
Gain Bandwidth Product
GBP
G = 1
50
MHz
Settling Time, 0.01%
G = ±1, 2 V step
0.2
μs
Overload Recovery Time
VIN × G = 1.2 V+
0.1
μs
Total Harmonic Distortion + Noise
THD + N
G = 1, RL = 600 , f = 1 kHz, VIN = 2 V p-p
0.0006
%
NOISE PERFORMANCE
Voltage Noise Density
en
f = 10 kHz
5
nV/√Hz
f = 100 kHz
4.5
nV/√Hz
Current Noise Density
in
f = 10 kHz
4
fA/√Hz
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