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参数资料
| 型号： | ADC081S051CISDX |
| 厂商： | NATIONAL SEMICONDUCTOR CORP |
| 元件分类： | ADC |
| 英文描述： | Single Channel, 500 kSPS, 8-Bit A/D Converter |
| 中文描述： | 1-CH 8-BIT SUCCESSIVE APPROXIMATION ADC, SERIAL ACCESS, PDSO6 |
| 封装： | LLP-6 |
| 文件页数： | 3/13页 |
| 文件大小： | 621K |
| 代理商： | ADC081S051CISDX |
Absolute Maximum Ratings
(Notes 1, 2)
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
Analog Supply Voltage V
A
Voltage on Any Pin to GND
Input Current at Any Pin (Note 3)
Package Input Current (Note 3)
Power Consumption at T
A
= 25C
ESD Susceptibility (Note 5)
Human Body Model
Machine Model
Junction Temperature
Storage Temperature
0.3V to 6.5V
0.3V to V
A
+0.3V
±
10 mA
±
20 mA
See (Note 4)
3500V
300V
+150C
65C to +150C
Operating Ratings
(Notes 1, 2)
Operating Temperature Range
V
A
Supply Voltage
Digital Input Pins Voltage Range
Clock Frequency
Sample Rate
Analog Input Voltage
40C
≤
T
A
≤
+85C
+2.7V to +5.25V
0.3V to V
A
4 MHz to 10 MHz
up to 500 kSPS
0V to V
A
Package Thermal Resistance
Package
6-lead LLP
θ
JA
78C / W
Soldering process must comply with National Semiconduc-
tor’s Reflow Temperature Profile specifications. Refer to
www.national.com/packaging.
(Note 6)
ADC081S051 Converter Electrical Characteristics
(Note 9)
The following specifications apply for V
= +2.7V to 5.25V, GND = 0V, f
= 4 MHz to 10 MHz,
f
= 200 kSPS to 500 kSPS, unless otherwise noted.
Boldface limits apply for T
A
= T
MIN
to T
MAX
: all other limits T
A
=
25C.
Symbol
Parameter
Conditions
Typical
Limits
(Note 9)
Units
STATIC CONVERTER CHARACTERISTICS
Resolution with No Missing Codes
8
Bits
INL
Integral Non-Linearity
+0.06
0.07
+0.07
0.06
+0.03
±
0.08
+0.8
0.07
+0.3
0.3
+0.2
0.2
±
0.2
±
0.4
+0.2
0.3
LSB (max)
LSB (min)
LSB (max)
LSB (min)
LSB (max)
LSB (max)
LSB (max)
LSB (min)
DNL
Differential Non-Linearity
V
OFF
GE
Offset Error
Gain Error
TUE
Total Unadjusted Error
DYNAMIC CONVERTER CHARACTERISTICS
SINAD
Signal-to-Noise Plus Distortion Ratio
V
A
= +2.7 to 5.25V
f
IN
= 100 kHz, 0.02 dBFS
V
A
= +2.7 to 5.25V
f
IN
= 100 kHz, 0.02 dBFS
V
A
= +2.7 to 5.25V
f
IN
= 100 kHz, 0.02 dBFS
V
A
= +2.7 to 5.25V
f
IN
= 100 kHz, 0.02 dBFS
V
A
= +2.7 to 5.25V
f
IN
= 100 kHz, 0.02 dBFS
V
A
= +5.25V
f
a
= 103.5 kHz, f
b
= 113.5 kHz
V
A
= +5.25V
f
a
= 103.5 kHz, f
b
= 113.5 kHz
V
A
= +5V
V
A
= +3V
49.6
49
dB (min)
SNR
Signal-to-Noise Ratio
49.6
49
dB (min)
THD
Total Harmonic Distortion
70
65
dB (max)
SFDR
Spurious-Free Dynamic Range
67
65
dB (min)
ENOB
Effective Number of Bits
7.9
7.8
Bits (min)
IMD
Intermodulation Distortion, Second
Order Terms
Intermodulation Distortion, Third
Order Terms
68
dB
68
dB
FPBW
-3 dB Full Power Bandwidth
11
8
MHz
MHz
A
www.national.com
3
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