参数资料
型号: ADG1219BRJZ-REEL7
厂商: Analog Devices Inc
文件页数: 1/16页
文件大小: 0K
描述: IC SWITCH SPDT SOT23-8
产品培训模块: iCMOS™ Switches and Multiplexers for Data Acquisition
Switch Fundamentals
标准包装: 1
系列: iCMOS®
功能: 开关
电路: 1 x SPDT - NC/NO
导通状态电阻: 475 欧姆
电压电源: 单/双电源
电压 - 电源,单路/双路(±): 12V,±15V
电流 - 电源: 140µA
工作温度: -40°C ~ 85°C
安装类型: 表面贴装
封装/外壳: SOT-23-8
供应商设备封装: SOT-23-8
包装: 标准包装
产品目录页面: 801 (CN2011-ZH PDF)
其它名称: ADG1219BRJZ-REEL7DKR
Low Capacitance, Low Charge Injection,
±15 V/12 V iCMOS SPDT in SOT-23
ADG1219
Rev. A
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibilityis assumedbyAnalogDevicesforitsuse,norforanyinfringementsof patentsorother
rightsofthirdpartiesthatmayresultfromitsuse.Specificationssubjecttochangewithoutnotice.No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
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One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: 781.329.4700
www.analog.com
Fax: 781.461.3113
2008–2009 Analog Devices, Inc. All rights reserved.
ADG1219
DECODER
SA
IN
EN
SB
FEATURES
<0.5 pC charge injection over full signal range
2.5 pF off capacitance
Low leakage; 0.6 nA maximum @ 85°C
120 Ω on resistance
Fully specified at +12 V, ±15 V
No VL supply required
3 V logic-compatible inputs
Rail-to-rail operation
8-lead SOT-23 package
APPLICATIONS
Automatic test equipment
Data acquisition systems
Battery-powered systems
Sample-and-hold systems
Audio/video signal routing
Communication systems
FUNCTIONAL BLOCK DIAGRAM
D
06
57
5-
0
01
SWITCHES SHOWN FOR A LOGIC 0 INPUT
0.5
–0.5
–15
15
06
57
5-
0
33
INPUT VOLTAGE (V)
CHA
RG
E
I
N
JE
CT
IO
N
(
p
C)
Figure 1.
GENERAL DESCRIPTION
The ADG1219 is a monolithic iCMOS device containing an
SPDT switch. An EN input is used to enable or disable the
device. When disabled, all channels are switched off. When on,
each channel conducts equally well in both directions and has
an input signal range that extends to the supplies. Each switch
exhibits break-before-make switching action.
The iCMOS (industrial CMOS) modular manufacturing
process combines high voltage complementary metal-oxide
semiconductor (CMOS) and bipolar technologies. It enables the
development of a wide range of high performance analog ICs
capable of 33 V operation in a footprint that no other generation
of high voltage parts has been able to achieve. Unlike analog ICs
using conventional CMOS processes, iCMOS components can
tolerate high supply voltages while providing increased perfor-
mance, dramatically lower power consumption, and reduced
package size.
The ultralow capacitance and exceptionally low charge injection
of these multiplexers make them ideal solutions for data acquisi-
tion and sample-and-hold applications, where low glitch and
fast settling are required. Figure 2 shows that there is minimum
charge injection over the entire signal range of the device.
iCMOS construction also ensures ultralow power dissipation,
making the parts ideally suited for portable and battery-
powered instruments.
TA = 25C
0.4
0.3
0.2
0.1
0
–0.1
–0.2
–0.3
–0.4
VDD = +15V
VSS = –15V
VDD = +12V
VSS = 0V
VDD = +5V
VSS = –5V
–10
–5
0
5
10
Figure 2. Charge Injection vs. Input Voltage
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