参数资料
型号: ADG417BRZ
厂商: Analog Devices Inc
文件页数: 2/8页
文件大小: 0K
描述: IC SWITCH SPST 8SOIC
产品培训模块: Switch Fundamentals
标准包装: 98
系列: LC²MOS
功能: 开关
电路: 1 x SPST- NC
导通状态电阻: 40 欧姆
电压电源: 单/双电源
电压 - 电源,单路/双路(±): 12V,±15V
电流 - 电源: 100pA
工作温度: -40°C ~ 85°C
安装类型: 表面贴装
封装/外壳: 8-SOIC(0.154",3.90mm 宽)
供应商设备封装: 8-SOIC
包装: 管件
产品目录页面: 800 (CN2011-ZH PDF)
B Version
T Version
–40 C to
–55 C to
Parameter
+25 C
+85 C
+25 C
+125 C
Units
Test Conditions/Comments
ANALOG SWITCH
Analog Signal Range
VSS to VDD
V
RON
25
typ
VD = ± 12.5 V, IS = –10 mA
35
45
35
45
max
VDD = +13.5 V, VSS = –13.5 V
LEAKAGE CURRENTS
VDD = +16.5 V, VSS = –16.5 V
Source OFF Leakage IS (OFF)
±0.1
nA typ
VD = ± 15.5 V, VS =
15.5 V;
±0.25
±5
±0.25
±15
nA max
Test Circuit 2
Drain OFF Leakage ID (OFF)
±0.1
nA typ
VD = ± 15.5 V, VS =
15.5 V;
±0.25
±5
±0.25
±15
nA max
Test Circuit 2
Channel ON Leakage ID, IS (ON)
±0.1
nA typ
VS = VD = ± 15.5 V;
±0.4
±5
±0.4
±30
nA max
Test Circuit 3
DIGITAL INPUTS
Input High Voltage, VINH
2.4
V min
Input Low Voltage, VINL
0.8
V max
Input Current
IINL or IINH
±0.005
A typ
VIN = VINL or VINH
±0.5
A max
DYNAMIC CHARACTERISTICS
2
tON
100
ns typ
RL = 300 , CL = 35 pF;
160
200
145
200
ns max
VS = ± 10 V; Test Circuit 4
tOFF
60
ns typ
RL = 300 , CL = 35 pF;
100
150
100
150
ns max
VS = ± 10 V; Test Circuit 4
Charge Injection
7
pC typ
VS = 0 V, RL = 0 ,
CL = 10 nF; Test Circuit 5
OFF Isolation
80
dB typ
RL = 50 , f = 1 MHz;
Test Circuit 6
CS (OFF)
6
pF typ
CD (OFF)
6
pF typ
CD, CS (ON)
55
pF typ
POWER REQUIREMENTS
VDD = +16.5 V, VSS = –16.5 V
IDD
0.0001
A typ
VIN = 0 V or 5 V
1
2.5
1
2.5
A max
ISS
0.0001
A typ
1
2.5
1
2.5
A max
IL
0.0001
A typ
VL = +5.5 V
1
2.5
1
2.5
A max
NOTES
1Temperature ranges are as follows: B Version: –40
°C to +85°C; T Version: –55°C to +125°C.
2Guaranteed by design, not subject to production test.
Specifications subject to change without notice.
REV. A
–2–
ADG417–SPECIFICATIONS
Dual Supply1 (V
DD = +15 V
10%, VSS = –15 V
10%, VL = +5 V
10%, GND = 0 V, unless otherwise noted)
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