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参数资料
| 型号： | ADG5433BRUZ |
| 厂商： | Analog Devices Inc |
| 文件页数： | 20/24页 |
| 文件大小： | 0K |
| 描述： | IC SWITCH THREE SPST 16TSSOP |
| 标准包装： | 96 |
| 功能： | 开关 |
| 电路： | 3 x SPDT - NC/NO |
| 导通状态电阻： | 16 欧姆 |
| 电压电源： | 单/双电源 |
| 电压 - 电源，单路/双路(±)： | 9 V ~ 40 V，±9 V ~ ±22 V |
| 电流 - 电源： | 80µA |
| 工作温度： | -40°C ~ 125°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 16-TSSOP（0.173"，4.40mm 宽） |
| 供应商设备封装： | 16-TSSOP |
| 包装： | 管件 |
Data Sheet
ADG5433/ADG5434
Rev. C | Page 5 of 24
Parameter
25°C
40°C to +85°C
40°C to +125°C
Unit
Test Conditions/Comments
Insertion Loss
0.8
dB typ
RL = 50 Ω, CL = 5 pF, f = 1 MHz;
CS (Off)
15
pF typ
VS = 0 V, f = 1 MHz
CD (Off)
23
pF typ
VS = 0 V, f = 1 MHz
CD (On), CS (On)
52
pF typ
VS = 0 V, f = 1 MHz
POWER REQUIREMENTS
VDD = +22 V, VSS = 22 V
IDD
50
A typ
Digital inputs = 0 V or VDD
70
110
A max
ISS
0.001
A typ
Digital inputs = 0 V or VDD
1
A max
VDD/VSS
±9/±22
V min/V max
GND = 0 V
1
Guaranteed by design; not subject to production test.
12 V SINGLE SUPPLY
VDD = 12 V ± 10%, VSS = 0 V, GND = 0 V, unless otherwise noted.
Table 3.
Parameter
25°C
40°C to +85°C
40°C to +125°C
Unit
Test Conditions/Comments
ANALOG SWITCH
Analog Signal Range
0 V to VDD
V
On Resistance, RON
26
Ω typ
VS = 0 V to 10 V, IS = 10 mA; see
30
36
42
Ω max
VDD = 10.8 V, VSS = 0 V
On-Resistance Match Between Channels,
RON
0.3
Ω typ
VS = 0 V to 10 V, IS = 10 mA
1
1.5
1.6
Ω max
On-Resistance Flatness, RFLAT (ON)
5.5
Ω typ
VS = 0 V to 10 V, IS = 10 mA
6.5
8
12
Ω max
LEAKAGE CURRENTS
VDD = 13.2 V, VSS = 0 V
Source Off Leakage, IS (Off)
±0.05
nA typ
VS = 1 V/10 V, VD = 10 V/1 V
±0.25
±1
±7
nA max
Drain Off Leakage, ID (Off)
±0.1
nA typ
VS = 1 V/10 V, VD = 10 V/1 V
±0.4
±4
±30
nA max
Channel On Leakage, ID (On), IS (On)
±0.1
nA typ
±0.4
±4
±30
nA max
DIGITAL INPUTS
Input High Voltage, VINH
2.0
V min
Input Low Voltage, VINL
0.8
V max
Input Current, IINL or IINH
0.002
A typ
VIN = VGND or VDD
±0.1
A max
Digital Input Capacitance, CIN
6
pF typ
DYNAMIC CHARACTERISTICS1
Transition Time, tTRANSITION
220
ns typ
RL = 300 Ω, CL = 35 pF
290
357
400
ns max
VS = 8 V
tON (EN)
228
ns typ
RL = 300 Ω, CL = 35 pF
289
370
426
ns max
tOFF (EN)
90
ns typ
RL = 300 Ω, CL = 35 pF
115
131
151
ns max
Break-Before-Make Time Delay, tD
106
ns typ
RL = 300 Ω, CL = 35 pF
54
ns min
Charge Injection, QINJ
60
pC typ
VS = 6 V, RS = 0 Ω, CL = 1 nF; see
Off Isolation
60
dB typ
RL = 50 Ω, CL = 5 pF, f = 1 MHz; see
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